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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF2807PBF
IRF2807PBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

IRF2807PBF - Infineon Technologies

Manifakti Nimewo Pati
IRF2807PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF2807PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 75V 82A TO220AB
Pake
TO-220-3
Done fèy
IRF2807PBF.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 30790

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IRF2807PBF Tech
Infineon Technologies - IRF2807PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF2807PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220AB  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 13mOhm @ 43A, 10V  
Dissipasyon pouvwa (Max) 230W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 3820 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 160 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 75 V  
Kouran - Kontini Drain (Id) @ 25 ° C 82A (Tc)  
Nimewo pwodwi baz IRF2807  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF2807PBF.

Pwodwi atribi IRF2807PBF IRF2807L IRF2805SPBF IRF2807STRRPBF
Nimewo Pati IRF2807PBF IRF2807L IRF2805SPBF IRF2807STRRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pake / Ka TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Kalite Through Hole Through Hole Surface Mount Surface Mount
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds 3820 pF @ 25 V 3820 pF @ 25 V 5110 pF @ 25 V 3820 pF @ 25 V
Pakèt Tube Tube Tube Tape & Reel (TR)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Rds Sou (Max) @ Id, Vgs 13mOhm @ 43A, 10V 13mOhm @ 43A, 10V 4.7mOhm @ 104A, 10V 13mOhm @ 43A, 10V
FET Feature - - - -
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Kouran - Kontini Drain (Id) @ 25 ° C 82A (Tc) 82A (Tc) 135A (Tc) 82A (Tc)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Founisè Aparèy pake TO-220AB TO-262 D2PAK D2PAK
Drenaj Sous Voltage (Vdss) 75 V 75 V 55 V 75 V
Dissipasyon pouvwa (Max) 230W (Tc) 230W (Tc) 200W (Tc) 230W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pòtay Charge (Qg) (Max) @ Vgs 160 nC @ 10 V 160 nC @ 10 V 230 nC @ 10 V 160 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Nimewo pwodwi baz IRF2807 - - IRF2807

IRF2807PBF fich PDF

Download IRF2807PBF PDF fich ak dokiman Infineon Technologies pou IRF2807PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs 8/Sep/2021.pdf Mult Dev Lot Chgs 25/May/2021.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf
PCN Lòt
Tube Pkg Qty Standardization 18/Aug/2016.pdf
Asanble PCN/orijin
Mult Dev A/T Site 26/Feb/2021.pdf

Shipment

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Metòd livrezon

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2.00kg-3.00kg USD $ 50.00 - USD $ 100.00
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    +00852 9146 4856

Sètifikasyon & Manm

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IRF2807PBF Image

IRF2807PBF

Infineon Technologies
32D-IRF2807PBF

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