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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF2807ZSTRRPBF
IRF2807ZSTRRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF2807ZSTRRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF2807ZSTRRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF2807ZSTRRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 75V 75A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRF2807ZSTRRPBF.pdf
Nan stok: 4550

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF2807ZSTRRPBF Tech
Infineon Technologies - IRF2807ZSTRRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF2807ZSTRRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 9.4mOhm @ 53A, 10V  
Dissipasyon pouvwa (Max) 170W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3270 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 110 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 75 V  
Kouran - Kontini Drain (Id) @ 25 ° C 75A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF2807ZSTRRPBF.

Pwodwi atribi IRF2807ZSTRRPBF IRF2903ZSPBF IRF2807ZPBF IRF2807ZSPBF
Nimewo Pati IRF2807ZSTRRPBF IRF2903ZSPBF IRF2807ZPBF IRF2807ZSPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies International Rectifier
Mounting Kalite Surface Mount Surface Mount Through Hole Surface Mount
Rds Sou (Max) @ Id, Vgs 9.4mOhm @ 53A, 10V 2.4mOhm @ 75A, 10V 9.4mOhm @ 53A, 10V 9.4mOhm @ 53A, 10V
Drenaj Sous Voltage (Vdss) 75 V 30 V 75 V 75 V
Kapasite Antre (Ciss) (Max) @ Vds 3270 pF @ 25 V 6320 pF @ 25 V 3270 pF @ 25 V 3270 pF @ 25 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±20V ±20V ±20V ±20V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V -
Pakèt Tape & Reel (TR) Tube Tube Bulk
Founisè Aparèy pake D2PAK D2PAK TO-220AB PG-TO263-3-2
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 150µA 4V @ 250µA 4V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 75A (Tc) 75A (Tc) 75A (Tc) 75A (Tc)
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pòtay Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 240 nC @ 10 V 110 nC @ 10 V 110 nC @ 10 V
Dissipasyon pouvwa (Max) 170W (Tc) 231W (Tc) 170W (Tc) 170W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Seri HEXFET® HEXFET® HEXFET® HEXFET®
FET Feature - - - -

IRF2807ZSTRRPBF fich PDF

Download IRF2807ZSTRRPBF PDF fich ak dokiman Infineon Technologies pou IRF2807ZSTRRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
Multiple Devices 25/Apr/2014.pdf
PCN konsepsyon/spesifikasyon
Material Chg 24/Nov/2015.pdf
Asanble PCN/orijin
Alternate Assembly Site 11/Nov/2013.pdf

Shipment

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Sètifikasyon & Manm

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IRF2807ZSTRRPBF Image

IRF2807ZSTRRPBF

Infineon Technologies
32D-IRF2807ZSTRRPBF

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