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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF300P227
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF300P227 - Infineon Technologies

Manifakti Nimewo Pati
IRF300P227
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF300P227
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 300V 50A TO247AC
Deskripsyon detaye
Pake
TO-247-3
Done fèy
IRF300P227.pdf
RoHs Status
Nan stok: 6822

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF300P227 Tech
Infineon Technologies - IRF300P227 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF300P227

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 270µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO247-3  
Seri StrongIRFET™  
Rds Sou (Max) @ Id, Vgs 40mOhm @ 30A, 10V  
Dissipasyon pouvwa (Max) 313W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 4893 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 107 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 300 V  
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc)  
Nimewo pwodwi baz IRF300  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF300P227.

Pwodwi atribi IRF300P227 IRF300P226 IRF3007STRLPBF IRF3007SPBF
Nimewo Pati IRF300P227 IRF300P226 IRF3007STRLPBF IRF3007SPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Through Hole Through Hole Surface Mount Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc) 100A (Tc) 62A (Tc) 62A (Tc)
Vgs (th) (Max) @ Id 4V @ 270µA 4V @ 270µA 4V @ 250µA 4V @ 250µA
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Vgs (Max) ±20V ±20V ±20V ±20V
Rds Sou (Max) @ Id, Vgs 40mOhm @ 30A, 10V 19mOhm @ 45A, 10V 12.6mOhm @ 48A, 10V 12.6mOhm @ 48A, 10V
Pake / Ka TO-247-3 TO-247-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nimewo pwodwi baz IRF300 IRF300 IRF3007 IRF3007
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 300 V 300 V 75 V 75 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pakèt Tube Tube Tape & Reel (TR) Tube
Pòtay Charge (Qg) (Max) @ Vgs 107 nC @ 10 V 191 nC @ 10 V 130 nC @ 10 V 130 nC @ 10 V
Founisè Aparèy pake PG-TO247-3 TO-247AC D2PAK D2PAK
Kapasite Antre (Ciss) (Max) @ Vds 4893 pF @ 50 V 10030 pF @ 50 V 3270 pF @ 25 V 3270 pF @ 25 V
Dissipasyon pouvwa (Max) 313W (Tc) 556W (Tc) 120W (Tc) 120W (Tc)
Seri StrongIRFET™ StrongIRFET™ HEXFET® HEXFET®

IRF300P227 fich PDF

Download IRF300P227 PDF fich ak dokiman Infineon Technologies pou IRF300P227 - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf
PCN anbalaj
Mult Dev Label Chgs 18/Feb/2020.pdf

Shipment

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Sètifikasyon & Manm

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Infineon Technologies

IRF300P227

Infineon Technologies
32D-IRF300P227

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