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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF3710STRR
IRF3710STRR Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

IRF3710STRR - Infineon Technologies

Manifakti Nimewo Pati
IRF3710STRR
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF3710STRR
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 57A D2PAK
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRF3710STRR.pdf
Sètifikasyon nou an
Nan stok: 3690

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IRF3710STRR Tech
Infineon Technologies - IRF3710STRR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF3710STRR

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 23mOhm @ 28A, 10V  
Dissipasyon pouvwa (Max) 200W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3130 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 130 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 57A (Tc)  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status RoHS ki pa konfòme
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF3710STRR.

Pwodwi atribi IRF3710STRR IRF3710STRLPBF IRF3710SPBF IRF3710ZSTRRPBF
Nimewo Pati IRF3710STRR IRF3710STRLPBF IRF3710SPBF IRF3710ZSTRRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kapasite Antre (Ciss) (Max) @ Vds 3130 pF @ 25 V 3130 pF @ 25 V 3130 pF @ 25 V 2900 pF @ 25 V
FET Feature - - - -
Vgs (Max) ±20V ±20V ±20V ±20V
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Founisè Aparèy pake D2PAK D2PAK D2PAK D2PAK
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Dissipasyon pouvwa (Max) 200W (Tc) 200W (Tc) 200W (Tc) 160W (Tc)
Kouran - Kontini Drain (Id) @ 25 ° C 57A (Tc) 57A (Tc) 57A (Tc) 59A (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 130 nC @ 10 V 130 nC @ 10 V 120 nC @ 10 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Rds Sou (Max) @ Id, Vgs 23mOhm @ 28A, 10V 23mOhm @ 28A, 10V 23mOhm @ 28A, 10V 18mOhm @ 35A, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tube Tape & Reel (TR)
Drenaj Sous Voltage (Vdss) 100 V 100 V 100 V 100 V

IRF3710STRR fich PDF

Download IRF3710STRR PDF fich ak dokiman Infineon Technologies pou IRF3710STRR - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf

Shipment

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Sètifikasyon & Manm

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IRF3710STRR Image

IRF3710STRR

Infineon Technologies
32D-IRF3710STRR

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