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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF3717PBF
IRF3717PBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF3717PBF - Infineon Technologies

Manifakti Nimewo Pati
IRF3717PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF3717PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 20A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF3717PbF.pdf
RoHs Status
Nan stok: 4470

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF3717PBF Tech
Infineon Technologies - IRF3717PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF3717PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.45V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 4.4mOhm @ 20A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2890 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 33 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF3717PBF.

Pwodwi atribi IRF3717PBF IRF3711ZCS IRF3717TR IRF3805
Nimewo Pati IRF3717PBF IRF3711ZCS IRF3717TR IRF3805
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Vgs (th) (Max) @ Id 2.45V @ 250µA 2.45V @ 250µA 2.45V @ 250µA 4V @ 250µA
Vgs (Max) ±20V ±20V ±20V ±20V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8-SOIC (0.154", 3.90mm Width) TO-220-3
Kapasite Antre (Ciss) (Max) @ Vds 2890 pF @ 10 V 2150 pF @ 10 V 2890 pF @ 10 V 7960 pF @ 25 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 20 V 20 V 20 V 55 V
Founisè Aparèy pake 8-SO D2PAK 8-SO TO-220AB
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Through Hole
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 4.4mOhm @ 20A, 10V 6mOhm @ 15A, 10V 4.4mOhm @ 20A, 10V 3.3mOhm @ 75A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Ta) 92A (Tc) 20A (Ta) 75A (Tc)
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Pòtay Charge (Qg) (Max) @ Vgs 33 nC @ 4.5 V 24 nC @ 4.5 V 33 nC @ 4.5 V 290 nC @ 10 V
Pakèt Tube Tube Tape & Reel (TR) Tube
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Dissipasyon pouvwa (Max) 2.5W (Ta) 79W (Tc) 2.5W (Ta) 330W (Tc)

IRF3717PBF fich PDF

Download IRF3717PBF PDF fich ak dokiman Infineon Technologies pou IRF3717PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Mult Dev Tube Pkg Std 27/Dec/2018.pdf
Asanble PCN/orijin
Backend Wafer Transfer 23/Oct/2013.pdf
PCN pati estati chanjman
Mult Dev Tube Pkg Disc 12/Jun/2018.pdf
Fich
IRF3717PbF.pdf

Shipment

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Sètifikasyon & Manm

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IRF3717PBF Image

IRF3717PBF

Infineon Technologies
32D-IRF3717PBF

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