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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF6215S
IRF6215S Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF6215S - Infineon Technologies

Manifakti Nimewo Pati
IRF6215S
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF6215S
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 150V 13A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRF6215S.pdf
Nan stok: 5150

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Espesifikasyon

Espesifikasyon IRF6215S Tech
Infineon Technologies - IRF6215S espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF6215S

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 290mOhm @ 6.6A, 10V  
Dissipasyon pouvwa (Max) 3.8W (Ta), 110W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 860 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 66 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 150 V  
Kouran - Kontini Drain (Id) @ 25 ° C 13A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF6215S.

Pwodwi atribi IRF6215S IRF6215STRLPBF IRF6215L IRF6215SPBF
Nimewo Pati IRF6215S IRF6215STRLPBF IRF6215L IRF6215SPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
FET Feature - - - -
Pòtay Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 66 nC @ 10 V 66 nC @ 10 V 66 nC @ 10 V
Fèt tip P-Channel P-Channel P-Channel P-Channel
Vgs (Max) ±20V ±20V ±20V ±20V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Kapasite Antre (Ciss) (Max) @ Vds 860 pF @ 25 V 860 pF @ 25 V 860 pF @ 25 V 860 pF @ 25 V
Kouran - Kontini Drain (Id) @ 25 ° C 13A (Tc) 13A (Tc) 13A (Tc) 13A (Tc)
Pakèt Tube Tape & Reel (TR) Tube Tube
Drenaj Sous Voltage (Vdss) 150 V 150 V 150 V 150 V
Rds Sou (Max) @ Id, Vgs 290mOhm @ 6.6A, 10V 290mOhm @ 6.6A, 10V 290mOhm @ 6.6A, 10V 290mOhm @ 6.6A, 10V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Dissipasyon pouvwa (Max) 3.8W (Ta), 110W (Tc) 3.8W (Ta), 110W (Tc) 3.8W (Ta), 110W (Tc) 3.8W (Ta), 110W (Tc)
Mounting Kalite Surface Mount Surface Mount Through Hole Surface Mount
Founisè Aparèy pake D2PAK D2PAK TO-262 D2PAK
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF6215S fich PDF

Download IRF6215S PDF fich ak dokiman Infineon Technologies pou IRF6215S - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
EOL122B 02/Oct/2007.pdf

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IRF6215S Image

IRF6215S

Infineon Technologies
32D-IRF6215S

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