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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIRF7103TRPBF
IRF7103TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7103TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7103TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7103TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 50V 3A 8-SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF7103TRPBF.pdf
RoHs Status
Nan stok: 92000

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF7103TRPBF Tech
Infineon Technologies - IRF7103TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7103TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 130mOhm @ 3A, 10V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 290pF @ 25V  
Pòtay Charge (Qg) (Max) @ Vgs 30nC @ 10V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 50V  
Kouran - Kontini Drain (Id) @ 25 ° C 3A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz IRF71  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7103TRPBF.

Pwodwi atribi IRF7103TRPBF IRF7104TRPBF IRF7103Q IRF7103PBF
Nimewo Pati IRF7103TRPBF IRF7104TRPBF IRF7103Q IRF7103PBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
Nimewo pwodwi baz IRF71 IRF71 IRF71 IRF71
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Kouran - Kontini Drain (Id) @ 25 ° C 3A 2.3A 3A 3A
Konfigirasyon 2 N-Channel (Dual) 2 P-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - Logic Level Gate - -
Kapasite Antre (Ciss) (Max) @ Vds 290pF @ 25V 290pF @ 15V 255pF @ 25V 290pF @ 25V
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Pòtay Charge (Qg) (Max) @ Vgs 30nC @ 10V 25nC @ 10V 15nC @ 10V 30nC @ 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tube Tube
Pouvwa - Max 2W 2W 2.4W 2W
Rds Sou (Max) @ Id, Vgs 130mOhm @ 3A, 10V 250mOhm @ 1A, 10V 130mOhm @ 3A, 10V 130mOhm @ 3A, 10V
Drenaj Sous Voltage (Vdss) 50V 20V 50V 50V

IRF7103TRPBF fich PDF

Download IRF7103TRPBF PDF fich ak dokiman Infineon Technologies pou IRF7103TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Barcode Label Update 24/Feb/2017.pdf Mult Dev Lot No Format Chg 6/Apr/2018.pdf
PCN Lòt
Mult Dev Lot Code Standardization 11/Nov/2022.pdf
PCN konsepsyon/spesifikasyon
Standardized Format 21/Jun/2023.pdf Mult Dev Halogen/PN Status Chgs 21/Feb/2023.pdf
Asanble PCN/orijin
Mult Dev Wafer Chg 18/Dec/2020.pdf

Shipment

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Sètifikasyon & Manm

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IRF7103TRPBF Image

IRF7103TRPBF

Infineon Technologies
32D-IRF7103TRPBF

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