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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIRF7105TRPBF
IRF7105TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7105TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7105TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7105TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N/P-CH 25V 8-SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF7105TRPBF.pdf
RoHs Status
Nan stok: 135720

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Espesifikasyon

Espesifikasyon IRF7105TRPBF Tech
Infineon Technologies - IRF7105TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7105TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 100mOhm @ 1A, 10V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 330pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 27nC @ 10V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 25V  
Kouran - Kontini Drain (Id) @ 25 ° C 3.5A, 2.3A  
Konfigirasyon N and P-Channel  
Nimewo pwodwi baz IRF71  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7105TRPBF.

Pwodwi atribi IRF7105TRPBF IRF7105QTRPBF IRF7105PBF IRF7106
Nimewo Pati IRF7105TRPBF IRF7105QTRPBF IRF7105PBF IRF7106
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Seri HEXFET® - HEXFET® HEXFET®
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 1V @ 250µA
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -
Kouran - Kontini Drain (Id) @ 25 ° C 3.5A, 2.3A 3.5A, 2.3A 3.5A, 2.3A 3A, 2.5A
Drenaj Sous Voltage (Vdss) 25V 25V 25V 20V
Pakèt Tape & Reel (TR) Cut Tape (CT) Tube Tube
Rds Sou (Max) @ Id, Vgs 100mOhm @ 1A, 10V 100mOhm @ 1A, 10V 100mOhm @ 1A, 10V 125mOhm @ 1A, 10V
FET Feature - - - -
Pouvwa - Max 2W 2W 2W 2W
Nimewo pwodwi baz IRF71 IRF71 IRF71 IRF71
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
Pòtay Charge (Qg) (Max) @ Vgs 27nC @ 10V 27nC @ 10V 27nC @ 10V 25nC @ 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Konfigirasyon N and P-Channel N and P-Channel N and P-Channel N and P-Channel
Kapasite Antre (Ciss) (Max) @ Vds 330pF @ 15V 330pF @ 15V 330pF @ 15V 300pF @ 15V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

IRF7105TRPBF fich PDF

Download IRF7105TRPBF PDF fich ak dokiman Infineon Technologies pou IRF7105TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Barcode Label Update 24/Feb/2017.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf
Asanble PCN/orijin
Mult Dev Wafer Site Chg 18/Dec/2020.pdf
PCN Lòt
Mult Dev Lot Code Standardization 11/Nov/2022.pdf

Shipment

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IRF7105TRPBF Image

IRF7105TRPBF

Infineon Technologies
32D-IRF7105TRPBF

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