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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF7220
IRF7220 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7220 - Infineon Technologies

Manifakti Nimewo Pati
IRF7220
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7220
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 14V 11A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF7220.pdf
Nan stok: 4230

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Espesifikasyon

Espesifikasyon IRF7220 Tech
Infineon Technologies - IRF7220 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7220

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 600mV @ 250µA (Min)  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 12mOhm @ 11A, 4.5V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 8075 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 125 nC @ 5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 14 V  
Kouran - Kontini Drain (Id) @ 25 ° C 11A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7220.

Pwodwi atribi IRF7220 IRF7220TRPBF IRF7210TRPBF IRF7233
Nimewo Pati IRF7220 IRF7220TRPBF IRF7210TRPBF IRF7233
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±12V ±12V ±12V ±12V
Kouran - Kontini Drain (Id) @ 25 ° C 11A (Ta) 11A (Ta) 16A (Ta) 9.5A (Ta)
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Kapasite Antre (Ciss) (Max) @ Vds 8075 pF @ 10 V 8075 pF @ 10 V 17179 pF @ 10 V 6000 pF @ 10 V
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tube
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Drenaj Sous Voltage (Vdss) 14 V 14 V 12 V 12 V
Rds Sou (Max) @ Id, Vgs 12mOhm @ 11A, 4.5V 12mOhm @ 11A, 4.5V 7mOhm @ 16A, 4.5V 20mOhm @ 9.5A, 4.5V
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
FET Feature - - - -
Dissipasyon pouvwa (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Pòtay Charge (Qg) (Max) @ Vgs 125 nC @ 5 V 125 nC @ 5 V 212 nC @ 5 V 74 nC @ 5 V
Vgs (th) (Max) @ Id 600mV @ 250µA (Min) 600mV @ 250µA (Min) 600mV @ 500µA (Min) 600mV @ 250µA (Min)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Fèt tip P-Channel P-Channel P-Channel P-Channel
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)

IRF7220 fich PDF

Download IRF7220 PDF fich ak dokiman Infineon Technologies pou IRF7220 - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
EOL122B 02/Oct/2007.pdf
Fich
IRF7220.pdf

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IRF7220 Image

IRF7220

Infineon Technologies
32D-IRF7220

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