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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIRF7307TRPBF
IRF7307TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7307TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7307TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7307TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N/P-CH 20V 8-SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF7307TRPBF.pdf
RoHs Status
Nan stok: 5000

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF7307TRPBF Tech
Infineon Technologies - IRF7307TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7307TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 700mV @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 50mOhm @ 2.6A, 4.5V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 660pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 20nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 5.2A, 4.3A  
Konfigirasyon N and P-Channel  
Nimewo pwodwi baz IRF73  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7307TRPBF.

Pwodwi atribi IRF7307TRPBF IRF7309QTRPBF IRF7306TRPBF IRF7309TRPBF
Nimewo Pati IRF7307TRPBF IRF7309QTRPBF IRF7306TRPBF IRF7309TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kouran - Kontini Drain (Id) @ 25 ° C 5.2A, 4.3A 4A, 3A 3.6A 4A, 3A
Drenaj Sous Voltage (Vdss) 20V 30V 30V 30V
Rds Sou (Max) @ Id, Vgs 50mOhm @ 2.6A, 4.5V 50mOhm @ 2.4A, 10V 100mOhm @ 1.8A, 10V 50mOhm @ 2.4A, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 20nC @ 4.5V 25nC @ 4.5V 25nC @ 10V 25nC @ 4.5V
Pouvwa - Max 2W 1.4W 2W 1.4W
Vgs (th) (Max) @ Id 700mV @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Nimewo pwodwi baz IRF73 IRF73 IRF73 IRF73
FET Feature Logic Level Gate - Logic Level Gate -
Operating Tanperati -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Konfigirasyon N and P-Channel N and P-Channel 2 P-Channel (Dual) N and P-Channel
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pakèt Tape & Reel (TR) Cut Tape (CT) Tape & Reel (TR) Tape & Reel (TR)
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
Kapasite Antre (Ciss) (Max) @ Vds 660pF @ 15V 520pF @ 15V 440pF @ 25V 520pF @ 15V
Seri HEXFET® - HEXFET® HEXFET®
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

IRF7307TRPBF fich PDF

Download IRF7307TRPBF PDF fich ak dokiman Infineon Technologies pou IRF7307TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf
PCN anbalaj
Packing Material Update 16/Sep/2016.pdf Barcode Label Update 24/Feb/2017.pdf
PCN Lòt
Mult Dev Lot Code Standardization 11/Nov/2022.pdf
Asanble PCN/orijin
Mult Dev Wafer Chgs 31/Mar/2021.pdf

Shipment

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IRF7307TRPBF Image

IRF7307TRPBF

Infineon Technologies
32D-IRF7307TRPBF

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