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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIRF7324PBF
IRF7324PBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

IRF7324PBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7324PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7324PBF
ECAD modèl
Pati Deskripsyon
MOSFET 2P-CH 20V 9A 8-SOIC
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF7324PBF.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 4130

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IRF7324PBF Tech
Infineon Technologies - IRF7324PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7324PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 1V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 18mOhm @ 9A, 4.5V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2940pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 63nC @ 5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 9A  
Konfigirasyon 2 P-Channel (Dual)  
Nimewo pwodwi baz IRF732  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7324PBF.

Pwodwi atribi IRF7324PBF IRF7325 IRF7324TRPBF IRF7325TRPBF
Nimewo Pati IRF7324PBF IRF7325 IRF7324TRPBF IRF7325TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kapasite Antre (Ciss) (Max) @ Vds 2940pF @ 15V 2020pF @ 10V 2940pF @ 15V 2020pF @ 10V
Vgs (th) (Max) @ Id 1V @ 250µA 900mV @ 250µA 1V @ 250µA 900mV @ 250µA
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Rds Sou (Max) @ Id, Vgs 18mOhm @ 9A, 4.5V 24mOhm @ 7.8A, 4.5V 18mOhm @ 9A, 4.5V 24mOhm @ 7.8A, 4.5V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drenaj Sous Voltage (Vdss) 20V 12V 20V 12V
Pouvwa - Max 2W 2W 2W 2W
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 63nC @ 5V 33nC @ 4.5V 63nC @ 5V 33nC @ 4.5V
Nimewo pwodwi baz IRF732 IRF732 IRF732 IRF732
Pakèt Tube Tube Tape & Reel (TR) Tape & Reel (TR)
Kouran - Kontini Drain (Id) @ 25 ° C 9A 7.8A 9A 7.8A
Konfigirasyon 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)

IRF7324PBF fich PDF

Download IRF7324PBF PDF fich ak dokiman Infineon Technologies pou IRF7324PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Packing Material Update 16/Sep/2016.pdf
PCN pati estati chanjman
Mult Dev Tube Pkg Disc 12/Jun/2018.pdf
Asanble PCN/orijin
Alternate Assembly Site 15/Apr/2014.pdf

Shipment

Tan livrezon

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Metòd livrezon

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2.00kg-3.00kg USD $ 50.00 - USD $ 100.00
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Sètifikasyon & Manm

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IRF7324PBF Image

IRF7324PBF

Infineon Technologies
32D-IRF7324PBF

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