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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIRF7329TR
IRF7329TR Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7329TR - Infineon Technologies

Manifakti Nimewo Pati
IRF7329TR
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7329TR
ECAD modèl
Pati Deskripsyon
MOSFET 2P-CH 12V 9.2A 8-SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF7329.pdf
Nan stok: 4070

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRF7329TR Tech
Infineon Technologies - IRF7329TR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7329TR

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 900mV @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 17mOhm @ 9.2A, 4.5V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3450pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 57nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 12V  
Kouran - Kontini Drain (Id) @ 25 ° C 9.2A  
Konfigirasyon 2 P-Channel (Dual)  
Nimewo pwodwi baz IRF732  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7329TR.

Pwodwi atribi IRF7329TR IRF7329PBF IRF7329TRPBF IRF7331TRPBF
Nimewo Pati IRF7329TR IRF7329PBF IRF7329TRPBF IRF7331TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Philips
Vgs (th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA 900mV @ 250µA 1.2V @ 250µA
Pouvwa - Max 2W 2W 2W 2W
Drenaj Sous Voltage (Vdss) 12V 12V 12V 20V
Kouran - Kontini Drain (Id) @ 25 ° C 9.2A 9.2A 9.2A 7A
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Konfigirasyon 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 N-Channel (Dual)
Pòtay Charge (Qg) (Max) @ Vgs 57nC @ 4.5V 57nC @ 4.5V 57nC @ 4.5V 20nC @ 4.5V
Nimewo pwodwi baz IRF732 IRF732 IRF732 IRF733
Rds Sou (Max) @ Id, Vgs 17mOhm @ 9.2A, 4.5V 17mOhm @ 9.2A, 4.5V 17mOhm @ 9.2A, 4.5V 30mOhm @ 7A, 4.5V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 3450pF @ 10V 3450pF @ 10V 3450pF @ 10V 1340pF @ 16V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Pakèt Tape & Reel (TR) Tube Tape & Reel (TR) Bulk

IRF7329TR fich PDF

Download IRF7329TR PDF fich ak dokiman Infineon Technologies pou IRF7329TR - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
EOL122B 02/Oct/2007.pdf
Fich
IRF7329.pdf

Shipment

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IRF7329TR Image

IRF7329TR

Infineon Technologies
32D-IRF7329TR

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