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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIRF7350TRPBF
IRF7350TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7350TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7350TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7350TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N/P-CH 100V 2.1A 8-SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF7350PbF.pdf
Nan stok: 4840

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Espesifikasyon

Espesifikasyon IRF7350TRPBF Tech
Infineon Technologies - IRF7350TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7350TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 210mOhm @ 2.1A, 10V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 380pF @ 25V  
Pòtay Charge (Qg) (Max) @ Vgs 28nC @ 10V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 100V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.1A, 1.5A  
Konfigirasyon N and P-Channel  
Nimewo pwodwi baz IRF7350  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7350TRPBF.

Pwodwi atribi IRF7350TRPBF IRF7343QTRPBF IRF7351PBF IRF7351TRPBF
Nimewo Pati IRF7350TRPBF IRF7343QTRPBF IRF7351PBF IRF7351TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Operating Tanperati -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pouvwa - Max 2W 2W 2W 2W
Pòtay Charge (Qg) (Max) @ Vgs 28nC @ 10V 36nC @ 10V 36nC @ 10V 36nC @ 10V
Vgs (th) (Max) @ Id 4V @ 250µA 1V @ 250µA 4V @ 50µA 4V @ 50µA
Pakèt Tape & Reel (TR) Cut Tape (CT) Tube Tape & Reel (TR)
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Seri HEXFET® - HEXFET® HEXFET®
FET Feature - - Logic Level Gate Logic Level Gate
Konfigirasyon N and P-Channel N and P-Channel 2 N-Channel (Dual) 2 N-Channel (Dual)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
Kapasite Antre (Ciss) (Max) @ Vds 380pF @ 25V 740pF @ 25V 1330pF @ 30V 1330pF @ 30V
Drenaj Sous Voltage (Vdss) 100V 55V 60V 60V
Rds Sou (Max) @ Id, Vgs 210mOhm @ 2.1A, 10V 50mOhm @ 4.7A, 10V 17.8mOhm @ 8A, 10V 17.8mOhm @ 8A, 10V
Nimewo pwodwi baz IRF7350 IRF734 IRF7351PBF IRF7351
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 2.1A, 1.5A 4.7A, 3.4A 8A 8A

IRF7350TRPBF fich PDF

Download IRF7350TRPBF PDF fich ak dokiman Infineon Technologies pou IRF7350TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
Fich
IRF7350PbF.pdf

Shipment

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32D-IRF7350TRPBF

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