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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF7524D1PBF
IRF7524D1PBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7524D1PBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7524D1PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7524D1PBF
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 1.7A MICRO8
Deskripsyon detaye
Pake
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Done fèy
IRF7524D1PbF.pdf
Nan stok: 4600

Jaden obligatwa yo endike pa yon asterisk (*)
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Espesifikasyon

Espesifikasyon IRF7524D1PBF Tech
Infineon Technologies - IRF7524D1PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7524D1PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 700mV @ 250µA (Min)  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake Micro8™  
Seri FETKY™  
Rds Sou (Max) @ Id, Vgs 270mOhm @ 1.2A, 4.5V  
Dissipasyon pouvwa (Max) 1.25W (Ta)  
Pake / Ka 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 240 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 8.2 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature Schottky Diode (Isolated)  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.7V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 1.7A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7524D1PBF.

Pwodwi atribi IRF7524D1PBF IRF7526D1TR IRF7524D1TR IRF7524D1GTRPBF
Nimewo Pati IRF7524D1PBF IRF7526D1TR IRF7524D1TR IRF7524D1GTRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.7V, 4.5V 4.5V, 10V 2.7V, 4.5V 2.7V, 4.5V
Vgs (Max) ±12V ±20V ±12V ±12V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 240 pF @ 15 V 180 pF @ 25 V 240 pF @ 15 V 240 pF @ 15 V
Kouran - Kontini Drain (Id) @ 25 ° C 1.7A (Ta) 2A (Ta) 1.7A (Ta) 1.7A (Ta)
Pòtay Charge (Qg) (Max) @ Vgs 8.2 nC @ 4.5 V 11 nC @ 10 V 8.2 nC @ 4.5 V 8.2 nC @ 4.5 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated)
Fèt tip P-Channel P-Channel P-Channel P-Channel
Pake / Ka 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Vgs (th) (Max) @ Id 700mV @ 250µA (Min) 1V @ 250µA 700mV @ 250µA (Min) 700mV @ 250µA (Min)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 1.25W (Ta) 1.25W (Ta) 1.25W (Ta) 1.25W (Ta)
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Drenaj Sous Voltage (Vdss) 20 V 30 V 20 V 20 V
Rds Sou (Max) @ Id, Vgs 270mOhm @ 1.2A, 4.5V 200mOhm @ 1.2A, 10V 270mOhm @ 1.2A, 4.5V 270mOhm @ 1.2A, 4.5V
Founisè Aparèy pake Micro8™ Micro8™ Micro8™ 8-uSMD
Seri FETKY™ FETKY™ FETKY™ FETKY™
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)

IRF7524D1PBF fich PDF

Download IRF7524D1PBF PDF fich ak dokiman Infineon Technologies pou IRF7524D1PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
Multiple Devices 19/Jun/2012.pdf
Fich
IRF7524D1PbF.pdf

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Infineon Technologies
32D-IRF7524D1PBF

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