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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIRF7907TRPBF
IRF7907TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7907TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7907TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7907TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 30V 9.1A/11A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF7907TRPBF.pdf
RoHs Status
Nan stok: 65200

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF7907TRPBF Tech
Infineon Technologies - IRF7907TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7907TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.35V @ 25µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 16.4mOhm @ 9.1A, 10V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 850pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 10nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 9.1A, 11A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz IRF7907  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7907TRPBF.

Pwodwi atribi IRF7907TRPBF IRF7905TRPBF IRF7907PBF IRF7910TRPBF
Nimewo Pati IRF7907TRPBF IRF7905TRPBF IRF7907PBF IRF7910TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kapasite Antre (Ciss) (Max) @ Vds 850pF @ 15V 600pF @ 15V 850pF @ 15V 1730pF @ 6V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drenaj Sous Voltage (Vdss) 30V 30V 30V 12V
Nimewo pwodwi baz IRF7907 IRF7905 IRF7907 IRF7910
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
Pouvwa - Max 2W 2W 2W 2W
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tube Tape & Reel (TR)
Kouran - Kontini Drain (Id) @ 25 ° C 9.1A, 11A 7.8A, 8.9A 9.1A, 11A 10A
Rds Sou (Max) @ Id, Vgs 16.4mOhm @ 9.1A, 10V 21.8mOhm @ 7.8A, 10V 16.4mOhm @ 9.1A, 10V 15mOhm @ 8A, 4.5V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Pòtay Charge (Qg) (Max) @ Vgs 10nC @ 4.5V 6.9nC @ 4.5V 10nC @ 4.5V 26nC @ 4.5V
Vgs (th) (Max) @ Id 2.35V @ 25µA 2.25V @ 25µA 2.35V @ 25µA 2V @ 250µA

IRF7907TRPBF fich PDF

Download IRF7907TRPBF PDF fich ak dokiman Infineon Technologies pou IRF7907TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf IR Part Numbering System.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Packing Material Update 16/Sep/2016.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf
PCN Lòt
Mult Dev Lot Code Standardization 11/Nov/2022.pdf
Asanble PCN/orijin
Mult Dev Site Add 28/Aug/2020.pdf

Shipment

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IRF7907TRPBF Image

IRF7907TRPBF

Infineon Technologies
32D-IRF7907TRPBF

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