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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIRF8915
IRF8915 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF8915 - Infineon Technologies

Manifakti Nimewo Pati
IRF8915
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF8915
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 20V 8.9A 8-SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF8915.pdf
Nan stok: 5240

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Espesifikasyon

Espesifikasyon IRF8915 Tech
Infineon Technologies - IRF8915 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF8915

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 18.3mOhm @ 8.9A, 10V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 540pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 8.9A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz IRF89  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF8915.

Pwodwi atribi IRF8915 IRF8910GTRPBF IRF8910TRPBF IRF8915TR
Nimewo Pati IRF8915 IRF8910GTRPBF IRF8910TRPBF IRF8915TR
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Kouran - Kontini Drain (Id) @ 25 ° C 8.9A 10A 10A 8.9A
Pòtay Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V 11nC @ 4.5V 11nC @ 4.5V 7.4nC @ 4.5V
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kapasite Antre (Ciss) (Max) @ Vds 540pF @ 10V 960pF @ 10V 960pF @ 10V 540pF @ 10V
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.55V @ 250µA 2.55V @ 250µA 2.5V @ 250µA
Pouvwa - Max 2W 2W 2W 2W
Drenaj Sous Voltage (Vdss) 20V 20V 20V 20V
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Rds Sou (Max) @ Id, Vgs 18.3mOhm @ 8.9A, 10V 13.4mOhm @ 10A, 10V 13.4mOhm @ 10A, 10V 18.3mOhm @ 8.9A, 10V
Nimewo pwodwi baz IRF89 IRF89 IRF89 IRF89

IRF8915 fich PDF

Download IRF8915 PDF fich ak dokiman Infineon Technologies pou IRF8915 - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
EOL122B 02/Oct/2007.pdf

Shipment

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Sètifikasyon & Manm

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IRF8915 Image

IRF8915

Infineon Technologies
32D-IRF8915

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