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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF9310TRPBF
IRF9310TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF9310TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF9310TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF9310TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 30V 20A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF9310TRPBF.pdf
RoHs Status
Nan stok: 60920

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF9310TRPBF Tech
Infineon Technologies - IRF9310TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF9310TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.4V @ 100µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 5250 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 165 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Tc)  
Nimewo pwodwi baz IRF9310  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF9310TRPBF.

Pwodwi atribi IRF9310TRPBF IRF9310PBF IRF9240 IRF9321PBF
Nimewo Pati IRF9310TRPBF IRF9310PBF IRF9240 IRF9321PBF
Manifakti Infineon Technologies Infineon Technologies International Rectifier Infineon Technologies
Drenaj Sous Voltage (Vdss) 30 V 30 V 200 V 30 V
Dissipasyon pouvwa (Max) 2.5W (Ta) 2.5W (Ta) 125W (Tc) 2.5W (Ta)
Rds Sou (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V 4.6mOhm @ 20A, 10V 580mOhm @ 11A, 10V 7.2mOhm @ 15A, 10V
Fèt tip P-Channel P-Channel P-Channel P-Channel
Mounting Kalite Surface Mount Surface Mount Through Hole Surface Mount
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) TO-204AA, TO-3 8-SOIC (0.154", 3.90mm Width)
Kapasite Antre (Ciss) (Max) @ Vds 5250 pF @ 15 V 5250 pF @ 15 V 1200 pF @ 25 V 2590 pF @ 25 V
Vgs (Max) ±20V ±20V ±20V ±20V
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Tc) 20A (Tc) 11A (Tc) 15A (Ta)
Pòtay Charge (Qg) (Max) @ Vgs 165 nC @ 10 V 165 nC @ 10 V 60 nC @ 10 V 98 nC @ 10 V
Nimewo pwodwi baz IRF9310 - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V
Pakèt Tape & Reel (TR) Tube Bulk Tube
Vgs (th) (Max) @ Id 2.4V @ 100µA 2.4V @ 100µA 4V @ 250µA 2.4V @ 50µA
Founisè Aparèy pake 8-SO 8-SO TO-204AA (TO-3) 8-SO
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

IRF9310TRPBF fich PDF

Download IRF9310TRPBF PDF fich ak dokiman Infineon Technologies pou IRF9310TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Barcode Label Update 24/Feb/2017.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf
Asanble PCN/orijin
Mosfet Backend Wafer Processing 23/Oct/2013.pdf

Shipment

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IRF9310TRPBF Image

IRF9310TRPBF

Infineon Technologies
32D-IRF9310TRPBF

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