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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF9393PBF
IRF9393PBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF9393PBF - Infineon Technologies

Manifakti Nimewo Pati
IRF9393PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF9393PBF
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 30V 9.2A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF9393PBF.pdf
RoHs Status
Nan stok: 4190

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Espesifikasyon

Espesifikasyon IRF9393PBF Tech
Infineon Technologies - IRF9393PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF9393PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.4V @ 25µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 13.3mOhm @ 9.2A, 20V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1110 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 38 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V, 20V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 9.2A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF9393PBF.

Pwodwi atribi IRF9393PBF IRF9410TRPBF IRF9410 IRF9410PBF
Nimewo Pati IRF9393PBF IRF9410TRPBF IRF9410 IRF9410PBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Kapasite Antre (Ciss) (Max) @ Vds 1110 pF @ 25 V 550 pF @ 25 V 550 pF @ 25 V 550 pF @ 25 V
FET Feature - - - -
Pakèt Tube Tape & Reel (TR) Tube Tube
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 9.2A (Ta) 7A (Ta) 7A (Ta) 7A (Ta)
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Vgs (th) (Max) @ Id 2.4V @ 25µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Pòtay Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 27 nC @ 10 V 27 nC @ 10 V 27 nC @ 10 V
Dissipasyon pouvwa (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Vgs (Max) ±25V ±20V ±20V ±20V
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Rds Sou (Max) @ Id, Vgs 13.3mOhm @ 9.2A, 20V 30mOhm @ 7A, 10V 30mOhm @ 7A, 10V 30mOhm @ 7A, 10V
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V, 20V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip P-Channel N-Channel N-Channel N-Channel

IRF9393PBF fich PDF

Download IRF9393PBF PDF fich ak dokiman Infineon Technologies pou IRF9393PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf
Asanble PCN/orijin
Warehouse Transfer 29/Jul/2015.pdf
PCN pati estati chanjman
Pkg Type Disc 16/May/2016.pdf

Shipment

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IRF9393PBF Image

IRF9393PBF

Infineon Technologies
32D-IRF9393PBF

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