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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIRF9956TRPBF
IRF9956TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF9956TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF9956TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF9956TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 30V 3.5A 8-SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF9956TRPBF.pdf
RoHs Status
Nan stok: 112130

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Kantite

Espesifikasyon

Espesifikasyon IRF9956TRPBF Tech
Infineon Technologies - IRF9956TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF9956TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 1V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 100mOhm @ 2.2A, 10V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 190pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 14nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 3.5A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz IRF995  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF9956TRPBF.

Pwodwi atribi IRF9956TRPBF IRF9956 IRF9956PBF IRF9953
Nimewo Pati IRF9956TRPBF IRF9956 IRF9956PBF IRF9953
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 14nC @ 10V 14nC @ 10V 14nC @ 10V 12nC @ 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Kouran - Kontini Drain (Id) @ 25 ° C 3.5A 3.5A 3.5A 2.3A
Rds Sou (Max) @ Id, Vgs 100mOhm @ 2.2A, 10V 100mOhm @ 2.2A, 10V 100mOhm @ 2.2A, 10V 250mOhm @ 1A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 190pF @ 15V 190pF @ 15V 190pF @ 15V 190pF @ 15V
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 P-Channel (Dual)
Pouvwa - Max 2W 2W 2W 2W
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pakèt Tape & Reel (TR) Tube Tube Tube
Drenaj Sous Voltage (Vdss) 30V 30V 30V 30V
Nimewo pwodwi baz IRF995 IRF995 IRF995 IRF995

IRF9956TRPBF fich PDF

Download IRF9956TRPBF PDF fich ak dokiman Infineon Technologies pou IRF9956TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf
PCN Lòt
Mult Dev Lot Code Standardization 11/Nov/2022.pdf
PCN konsepsyon/spesifikasyon
Standardized Format 21/Jun/2023.pdf Mult Dev Halogen/PN Status Chgs 21/Feb/2023.pdf
Asanble PCN/orijin
Mult Dev Wafer Chg 18/Dec/2020.pdf

Shipment

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IRF9956TRPBF

Infineon Technologies
32D-IRF9956TRPBF

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