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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFH5004TR2PBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFH5004TR2PBF - Infineon Technologies

Manifakti Nimewo Pati
IRFH5004TR2PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFH5004TR2PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 40V 28A 8VQFN
Deskripsyon detaye
Pake
8-PowerVDFN
Done fèy
IRFH5004TR2PBF.pdf
Nan stok: 5410

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFH5004TR2PBF Tech
Infineon Technologies - IRFH5004TR2PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFH5004TR2PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 150µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-PQFN (5x6)  
Seri -  
Rds Sou (Max) @ Id, Vgs 2.6mOhm @ 50A, 10V  
Pake / Ka 8-PowerVDFN  
Pakèt Cut Tape (CT)  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 4490 pF @ 20 V  
Pòtay Charge (Qg) (Max) @ Vgs 110 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 28A (Ta), 100A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFH5004TR2PBF.

Pwodwi atribi IRFH5004TR2PBF IRFH5004TRPBF IRFH5010TR2PBF IRFH5007TR2PBF
Nimewo Pati IRFH5004TR2PBF IRFH5004TRPBF IRFH5010TR2PBF IRFH5007TR2PBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies International Rectifier
Kapasite Antre (Ciss) (Max) @ Vds 4490 pF @ 20 V 4490 pF @ 20 V 4340 pF @ 25 V 4290 pF @ 25 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 4V @ 150µA 4V @ 150µA 4V @ 150µA 4V @ 150µA
Seri - HEXFET® - HEXFET®
Founisè Aparèy pake 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6)
Pòtay Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 110 nC @ 10 V 98 nC @ 10 V 98 nC @ 10 V
FET Feature - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 2.6mOhm @ 50A, 10V 2.6mOhm @ 50A, 10V 9mOhm @ 50A, 10V 5.9mOhm @ 50A, 10V
Pakèt Cut Tape (CT) Tape & Reel (TR) Cut Tape (CT) Bulk
Drenaj Sous Voltage (Vdss) 40 V 40 V 100 V 75 V
Kouran - Kontini Drain (Id) @ 25 ° C 28A (Ta), 100A (Tc) 28A (Ta), 100A (Tc) 13A (Ta), 100A (Tc) 17A (Ta), 100A (Tc)
Pake / Ka 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerTDFN
Fèt tip N-Channel N-Channel N-Channel N-Channel

IRFH5004TR2PBF fich PDF

Download IRFH5004TR2PBF PDF fich ak dokiman Infineon Technologies pou IRFH5004TR2PBF - Infineon Technologies.

Asanble PCN/orijin
Mosfet Backend Wafer Processing 23/Oct/2013.pdf
PCN obsolescence/ eol
Multiple Devices 13/Nov/2013.pdf

Shipment

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Sètifikasyon & Manm

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Infineon Technologies

IRFH5004TR2PBF

Infineon Technologies
32D-IRFH5004TR2PBF

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