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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFH5020TRPBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFH5020TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFH5020TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFH5020TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 200V 5.1A 8PQFN
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
IRFH5020TRPBF.pdf
RoHs Status
Nan stok: 26444

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFH5020TRPBF Tech
Infineon Technologies - IRFH5020TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFH5020TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 5V @ 150µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-PQFN (5x6)  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 55mOhm @ 7.5A, 10V  
Dissipasyon pouvwa (Max) 3.6W (Ta), 8.3W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2290 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 54 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 5.1A (Ta)  
Nimewo pwodwi baz IRFH5020  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFH5020TRPBF.

Pwodwi atribi IRFH5020TRPBF IRFH5015TRPBF IRFH5025TR2PBF IRFH5053TR2PBF
Nimewo Pati IRFH5020TRPBF IRFH5015TRPBF IRFH5025TR2PBF IRFH5053TR2PBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Founisè Aparèy pake 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) PQFN (5x6) Single Die
Pakèt Tape & Reel (TR) Tape & Reel (TR) Cut Tape (CT) Cut Tape (CT)
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerVDFN 8-PowerVDFN
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 5.1A (Ta) 10A (Ta), 56A (Tc) 3.8A (Ta) 9.3A (Ta), 46A (Tc)
Seri HEXFET® HEXFET® - -
Kapasite Antre (Ciss) (Max) @ Vds 2290 pF @ 100 V 2300 pF @ 50 V 2150 pF @ 50 V 1510 pF @ 50 V
Pòtay Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 50 nC @ 10 V 56 nC @ 10 V 36 nC @ 10 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V - -
Vgs (th) (Max) @ Id 5V @ 150µA 5V @ 150µA 5V @ 150µA 4.9V @ 100µA
Nimewo pwodwi baz IRFH5020 IRFH5015 - -
Drenaj Sous Voltage (Vdss) 200 V 150 V 250 V 100 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 3.6W (Ta), 8.3W (Tc) 3.6W (Ta), 156W (Tc) - -
Vgs (Max) ±20V ±20V - -
Rds Sou (Max) @ Id, Vgs 55mOhm @ 7.5A, 10V 31mOhm @ 34A, 10V 100mOhm @ 5.7A, 10V 18mOhm @ 9.3A, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

IRFH5020TRPBF fich PDF

Download IRFH5020TRPBF PDF fich ak dokiman Infineon Technologies pou IRFH5020TRPBF - Infineon Technologies.

PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf Mult Dev Lot Chgs 25/May/2021.pdf
PCN anbalaj
Packing Material Update 16/Sep/2016.pdf Barcode Label Update 24/Feb/2017.pdf
Asanble PCN/orijin
Back End Processing Transfer 19/Aug/2016.pdf

Shipment

Tan livrezon

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Metòd livrezon

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DHL & FedEx Shipment Chaj Referans
Chajman chaj (kg) Referans DHL (USD $)
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2.00kg-3.00kg USD $ 50.00 - USD $ 100.00
Remak:
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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IRFH5020TRPBF

Infineon Technologies
32D-IRFH5020TRPBF

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