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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFH5206TR2PBF
Infineon Technologies
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wè espesifikasyon pou detay pwodwi.
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IRFH5206TR2PBF - Infineon Technologies

Manifakti Nimewo Pati
IRFH5206TR2PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFH5206TR2PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 16A 5X6 PQFN
Pake
8-PowerVDFN
Done fèy
IRFH5206TR2PBF.pdf
Sètifikasyon nou an
Nan stok: 4930

Jaden obligatwa yo endike pa yon asterisk (*)
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EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IRFH5206TR2PBF Tech
Infineon Technologies - IRFH5206TR2PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFH5206TR2PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 100µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-PQFN (5x6)  
Seri -  
Rds Sou (Max) @ Id, Vgs 6.7mOhm @ 50A, 10V  
Pake / Ka 8-PowerVDFN  
Pakèt Cut Tape (CT)  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2490 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 60 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta), 89A (Tc)  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFH5206TR2PBF.

Pwodwi atribi IRFH5206TR2PBF IRFH5210TRPBF IRFH5204TRPBF IRFH5215TRPBF
Nimewo Pati IRFH5206TR2PBF IRFH5210TRPBF IRFH5204TRPBF IRFH5215TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pakèt Cut Tape (CT) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Founisè Aparèy pake 8-PQFN (5x6) 8-PQFN (5x6) PQFN (5x6) PQFN (5x6)
Drenaj Sous Voltage (Vdss) 60 V 100 V 40 V 150 V
Pòtay Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 59 nC @ 10 V 65 nC @ 10 V 32 nC @ 10 V
Seri - HEXFET® HEXFET® HEXFET®
Vgs (th) (Max) @ Id 4V @ 100µA 4V @ 100µA 4V @ 100µA 5V @ 100µA
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kapasite Antre (Ciss) (Max) @ Vds 2490 pF @ 25 V 2570 pF @ 25 V 2460 pF @ 25 V 1350 pF @ 50 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta), 89A (Tc) 10A (Ta), 55A (Tc) 22A (Ta), 100A (Tc) 5A (Ta), 27A (Tc)
Pake / Ka 8-PowerVDFN 8-PowerVDFN 8-VQFN Exposed Pad 8-VQFN Exposed Pad
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 6.7mOhm @ 50A, 10V 14.9mOhm @ 33A, 10V 4.3mOhm @ 50A, 10V 58mOhm @ 16A, 10V

IRFH5206TR2PBF fich PDF

Download IRFH5206TR2PBF PDF fich ak dokiman Infineon Technologies pou IRFH5206TR2PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
Enfòmasyon sou anviwònman an
PQFN 5x6 RoHS Compliance.pdf
PCN obsolescence/ eol
Multiple Devices 13/Nov/2013.pdf
Asanble PCN/orijin
Mosfet Backend Wafer Processing 23/Oct/2013.pdf

Shipment

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Infineon Technologies

IRFH5206TR2PBF

Infineon Technologies
32D-IRFH5206TR2PBF

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