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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFH7440TRPBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFH7440TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFH7440TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFH7440TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 40V 85A 8PQFN
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
IRFH7440TRPBF.pdf
RoHs Status
Nan stok: 53030

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFH7440TRPBF Tech
Infineon Technologies - IRFH7440TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFH7440TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.9V @ 100µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-PQFN (5x6)  
Seri HEXFET®, StrongIRFET™  
Rds Sou (Max) @ Id, Vgs 2.4mOhm @ 50A, 10V  
Dissipasyon pouvwa (Max) 104W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 4574 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 138 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 85A (Tc)  
Nimewo pwodwi baz IRFH7440  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFH7440TRPBF.

Pwodwi atribi IRFH7440TRPBF IRFH7440TR2PBF IRFH7446TR2PBF IRFH7194TRPBF
Nimewo Pati IRFH7440TRPBF IRFH7440TR2PBF IRFH7446TR2PBF IRFH7194TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies International Rectifier
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Dissipasyon pouvwa (Max) 104W (Tc) - - 3.6W (Ta), 39W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V - - 10V
Seri HEXFET®, StrongIRFET™ - - FASTIRFET™, HEXFET®
Nimewo pwodwi baz IRFH7440 - - -
FET Feature - - - -
Founisè Aparèy pake 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6)
Kapasite Antre (Ciss) (Max) @ Vds 4574 pF @ 25 V 4574 pF @ 25 V 3174 pF @ 25 V 733 pF @ 50 V
Vgs (th) (Max) @ Id 3.9V @ 100µA 3.9V @ 100µA 3.9V @ 100µA 3.6V @ 50µA
Drenaj Sous Voltage (Vdss) 40 V 40 V 40 V 100 V
Rds Sou (Max) @ Id, Vgs 2.4mOhm @ 50A, 10V 2.4mOhm @ 50A, 10V 3.3mOhm @ 50A, 10V 16.4mOhm @ 21A, 10V
Pakèt Tape & Reel (TR) Cut Tape (CT) Cut Tape (CT) Bulk
Operating Tanperati -55°C ~ 150°C (TJ) - - -55°C ~ 150°C (TJ)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 85A (Tc) 85A (Tc) 85A (Tc) 11A (Ta), 35A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 138 nC @ 10 V 138 nC @ 10 V 98 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±20V - - ±20V

IRFH7440TRPBF fich PDF

Download IRFH7440TRPBF PDF fich ak dokiman Infineon Technologies pou IRFH7440TRPBF - Infineon Technologies.

PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf Mult Dev Lot Chgs 25/May/2021.pdf
PCN anbalaj
Mult Dev Label Chgs 18/Feb/2020.pdf Barcode Label Update 24/Feb/2017.pdf
Asanble PCN/orijin
Mult Dev A/T Chgs 15/Mar/2022.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IRFH7440TRPBF

Infineon Technologies
32D-IRFH7440TRPBF

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