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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFP250NPBF
IRFP250NPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFP250NPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFP250NPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFP250NPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 200V 30A TO247AC
Deskripsyon detaye
Pake
TO-247-3
Done fèy
IRFP250NPBF.pdf
RoHs Status
Nan stok: 29273

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Espesifikasyon

Espesifikasyon IRFP250NPBF Tech
Infineon Technologies - IRFP250NPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFP250NPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-247AC  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 75mOhm @ 18A, 10V  
Dissipasyon pouvwa (Max) 214W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 2159 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 123 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 30A (Tc)  
Nimewo pwodwi baz IRFP250  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFP250NPBF.

Pwodwi atribi IRFP250NPBF IRFP260 IRFP254 IRFP250MPBF
Nimewo Pati IRFP250NPBF IRFP260 IRFP254 IRFP250MPBF
Manifakti Infineon Technologies IXYS Vishay Siliconix Infineon Technologies
Kouran - Kontini Drain (Id) @ 25 ° C 30A (Tc) 46A (Tc) 23A (Tc) 30A (Tc)
Founisè Aparèy pake TO-247AC TO-247 (IXTH) TO-247AC TO-247AC
Drenaj Sous Voltage (Vdss) 200 V 200 V 250 V 200 V
Kapasite Antre (Ciss) (Max) @ Vds 2159 pF @ 25 V 3900 pF @ 25 V 2700 pF @ 25 V 2159 pF @ 25 V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Pake / Ka TO-247-3 TO-247-3 TO-247-3 TO-247-3
Dissipasyon pouvwa (Max) 214W (Tc) 280W (Tc) 190W (Tc) 214W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 123 nC @ 10 V 230 nC @ 10 V 140 nC @ 10 V 123 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tube Tube Tube Tube
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 75mOhm @ 18A, 10V 55mOhm @ 28A, 10V 140mOhm @ 14A, 10V 75mOhm @ 18A, 10V
Seri HEXFET® - - HEXFET®
Nimewo pwodwi baz IRFP250 IRFP26 IRFP254 IRFP250
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±20V
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V

IRFP250NPBF fich PDF

Download IRFP250NPBF PDF fich ak dokiman Infineon Technologies pou IRFP250NPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf Mult Dev Material Chgs 4/Dec/2020.pdf
Asanble PCN/orijin
Mult Dev A/T Site 26/Feb/2021.pdf
PCN anbalaj
Mult Dev Label Chgs 18/Feb/2020.pdf Packing Material Update 16/Sep/2016.pdf

Shipment

Tan livrezon

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Sètifikasyon & Manm

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IRFP250NPBF Image

IRFP250NPBF

Infineon Technologies
32D-IRFP250NPBF

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