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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFP260NPBF
IRFP260NPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFP260NPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFP260NPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFP260NPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 200V 50A TO247AC
Deskripsyon detaye
Pake
TO-247-3
Done fèy
IRFP260NPBF.pdf
RoHs Status
Nan stok: 12078

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Espesifikasyon

Espesifikasyon IRFP260NPBF Tech
Infineon Technologies - IRFP260NPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFP260NPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-247AC  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 40mOhm @ 28A, 10V  
Dissipasyon pouvwa (Max) 300W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 4057 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 234 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc)  
Nimewo pwodwi baz IRFP260  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFP260NPBF.

Pwodwi atribi IRFP260NPBF IRFP260 IRFP260MPBF IRFP26N60L
Nimewo Pati IRFP260NPBF IRFP260 IRFP260MPBF IRFP26N60L
Manifakti Infineon Technologies IXYS Infineon Technologies Vishay Siliconix
Founisè Aparèy pake TO-247AC TO-247 (IXTH) TO-247AC TO-247AC
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 40mOhm @ 28A, 10V 55mOhm @ 28A, 10V 40mOhm @ 28A, 10V 250mOhm @ 16A, 10V
Pòtay Charge (Qg) (Max) @ Vgs 234 nC @ 10 V 230 nC @ 10 V 234 nC @ 10 V 180 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc) 46A (Tc) 50A (Tc) 26A (Tc)
Vgs (Max) ±20V ±20V ±20V ±30V
Kapasite Antre (Ciss) (Max) @ Vds 4057 pF @ 25 V 3900 pF @ 25 V 4057 pF @ 25 V 5020 pF @ 25 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pakèt Tube Tube Tube Tube
Dissipasyon pouvwa (Max) 300W (Tc) 280W (Tc) 300W (Tc) 470W (Tc)
Nimewo pwodwi baz IRFP260 IRFP26 IRFP260 IRFP26
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Drenaj Sous Voltage (Vdss) 200 V 200 V 200 V 600 V
Seri HEXFET® - HEXFET® -
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Pake / Ka TO-247-3 TO-247-3 TO-247-3 TO-247-3
Mounting Kalite Through Hole Through Hole Through Hole Through Hole

IRFP260NPBF fich PDF

Download IRFP260NPBF PDF fich ak dokiman Infineon Technologies pou IRFP260NPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs 8/Sep/2021.pdf Mult Dev Material Chgs 4/Dec/2020.pdf
PCN anbalaj
Mult Device Standard Label Chg 29/Sep/2017.pdf Mult Dev Label Chgs 18/Feb/2020.pdf
Asanble PCN/orijin
Mult Dev A/T Site 26/Feb/2021.pdf

Shipment

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Sètifikasyon & Manm

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IRFP260NPBF Image

IRFP260NPBF

Infineon Technologies
32D-IRFP260NPBF

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