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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFR1010ZPBF
IRFR1010ZPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFR1010ZPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFR1010ZPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFR1010ZPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 55V 42A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IRFR1010ZPBF.pdf
RoHs Status
Nan stok: 4750

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFR1010ZPBF Tech
Infineon Technologies - IRFR1010ZPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFR1010ZPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 100µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D-Pak  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 7.5mOhm @ 42A, 10V  
Dissipasyon pouvwa (Max) 140W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2840 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 95 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 55 V  
Kouran - Kontini Drain (Id) @ 25 ° C 42A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFR1010ZPBF.

Pwodwi atribi IRFR1010ZPBF IRFR024TRPBF IRFR1018EPBF IRFR024TR
Nimewo Pati IRFR1010ZPBF IRFR024TRPBF IRFR1018EPBF IRFR024TR
Manifakti Infineon Technologies Vishay Siliconix International Rectifier Vishay Siliconix
Dissipasyon pouvwa (Max) 140W (Tc) 2.5W (Ta), 42W (Tc) 110W (Tc) 2.5W (Ta), 42W (Tc)
Rds Sou (Max) @ Id, Vgs 7.5mOhm @ 42A, 10V 100mOhm @ 8.4A, 10V 8.4mOhm @ 47A, 10V 100mOhm @ 8.4A, 10V
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Kouran - Kontini Drain (Id) @ 25 ° C 42A (Tc) 14A (Tc) 56A (Tc) 14A (Tc)
Vgs (Max) ±20V ±20V ±20V ±20V
Vgs (th) (Max) @ Id 4V @ 100µA 4V @ 250µA 4V @ 100µA 4V @ 250µA
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V - 10V
Seri HEXFET® - HEXFET® -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tube Tape & Reel (TR) Bulk Tape & Reel (TR)
Pòtay Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 25 nC @ 10 V 69 nC @ 10 V 25 nC @ 10 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kapasite Antre (Ciss) (Max) @ Vds 2840 pF @ 25 V 640 pF @ 25 V 2290 pF @ 50 V 640 pF @ 25 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Founisè Aparèy pake D-Pak D-Pak TO-252AA D-Pak
Drenaj Sous Voltage (Vdss) 55 V 60 V 60 V 60 V

IRFR1010ZPBF fich PDF

Download IRFR1010ZPBF PDF fich ak dokiman Infineon Technologies pou IRFR1010ZPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Tube Pkg Qty Std Rev 18/Aug/2016.pdf
PCN Lòt
Tube Pkg Qty Standardization 18/Aug/2016.pdf
Asanble PCN/orijin
Backend Wafer Transfer 23/Oct/2013.pdf
PCN pati estati chanjman
Mult Dev Tube Pkg Disc 12/Jun/2018.pdf

Shipment

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Sètifikasyon & Manm

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IRFR1010ZPBF Image

IRFR1010ZPBF

Infineon Technologies
32D-IRFR1010ZPBF

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