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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFR120NTRLPBF
IRFR120NTRLPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFR120NTRLPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFR120NTRLPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFR120NTRLPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 9.4A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IRFR120NTRLPBF.pdf
RoHs Status
Nan stok: 112180

Jaden obligatwa yo endike pa yon asterisk (*)
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Espesifikasyon

Espesifikasyon IRFR120NTRLPBF Tech
Infineon Technologies - IRFR120NTRLPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFR120NTRLPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO252-3  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 210mOhm @ 5.6A, 10V  
Dissipasyon pouvwa (Max) 48W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 330 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 9.4A (Tc)  
Nimewo pwodwi baz IRFR120  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFR120NTRLPBF.

Pwodwi atribi IRFR120NTRLPBF IRFR120TR IRFR120TRL IRFR120NTRPBF
Nimewo Pati IRFR120NTRLPBF IRFR120TR IRFR120TRL IRFR120NTRPBF
Manifakti Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies
Dissipasyon pouvwa (Max) 48W (Tc) 2.5W (Ta), 42W (Tc) 2.5W (Ta), 42W (Tc) 48W (Tc)
Nimewo pwodwi baz IRFR120 IRFR120 IRFR120 IRFR120
Drenaj Sous Voltage (Vdss) 100 V 100 V 100 V 100 V
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 16 nC @ 10 V 16 nC @ 10 V 25 nC @ 10 V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Founisè Aparèy pake PG-TO252-3 D-Pak D-Pak D-Pak
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 210mOhm @ 5.6A, 10V 270mOhm @ 4.6A, 10V 270mOhm @ 4.6A, 10V 210mOhm @ 5.6A, 10V
Vgs (Max) ±20V ±20V ±20V ±20V
Seri HEXFET® - - HEXFET®
Kapasite Antre (Ciss) (Max) @ Vds 330 pF @ 25 V 360 pF @ 25 V 360 pF @ 25 V 330 pF @ 25 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 9.4A (Tc) 7.7A (Tc) 7.7A (Tc) 9.4A (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)

IRFR120NTRLPBF fich PDF

Download IRFR120NTRLPBF PDF fich ak dokiman Infineon Technologies pou IRFR120NTRLPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN konsepsyon/spesifikasyon
Mult Dev No Format/Barcode Label 15/Jan/2019.pdf Mult Dev Label Chgs Aug/2020.pdf
Asanble PCN/orijin
Warehouse Transfer 29/Jul/2015.pdf
PCN anbalaj
Mult Dev Label Chgs 18/Feb/2020.pdf Mult Dev Lot No Format Chg 6/Apr/2018.pdf
PCN Lòt
Mult Dev Lot Code Standardization 11/Nov/2022.pdf

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IRFR120NTRLPBF Image

IRFR120NTRLPBF

Infineon Technologies
32D-IRFR120NTRLPBF

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