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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFR2407TRPBF
IRFR2407TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFR2407TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFR2407TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFR2407TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 75V 42A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IRFR2407, IRFU2407.pdf
RoHs Status
Nan stok: 56510

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRFR2407TRPBF Tech
Infineon Technologies - IRFR2407TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFR2407TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D-Pak  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 26mOhm @ 25A, 10V  
Dissipasyon pouvwa (Max) 110W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2400 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 110 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 75 V  
Kouran - Kontini Drain (Id) @ 25 ° C 42A (Tc)  
Nimewo pwodwi baz IRFR2407  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFR2407TRPBF.

Pwodwi atribi IRFR2407TRPBF IRFR24N15DTRPBF IRFR2405TRLPBF IRFR24N10D
Nimewo Pati IRFR2407TRPBF IRFR24N15DTRPBF IRFR2405TRLPBF IRFR24N10D
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Rds Sou (Max) @ Id, Vgs 26mOhm @ 25A, 10V 95mOhm @ 14A, 10V 16mOhm @ 34A, 10V -
Dissipasyon pouvwa (Max) 110W (Tc) 140W (Tc) 110W (Tc) -
Seri HEXFET® HEXFET® HEXFET® -
Kapasite Antre (Ciss) (Max) @ Vds 2400 pF @ 25 V 890 pF @ 25 V 2430 pF @ 25 V -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Nimewo pwodwi baz IRFR2407 IRFR24 IRFR2405 IRFR24
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V -
Vgs (th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA -
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Pòtay Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 45 nC @ 10 V 110 nC @ 10 V -
Kouran - Kontini Drain (Id) @ 25 ° C 42A (Tc) 24A (Tc) 56A (Tc) -
Drenaj Sous Voltage (Vdss) 75 V 150 V 55 V 100 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tube
Founisè Aparèy pake D-Pak D-Pak D-Pak D-Pak
Vgs (Max) ±20V ±30V ±20V -

IRFR2407TRPBF fich PDF

Download IRFR2407TRPBF PDF fich ak dokiman Infineon Technologies pou IRFR2407TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Mult Device Standard Label Chg 29/Sep/2017.pdf Mult Dev Label Chgs 18/Feb/2020.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf
Asanble PCN/orijin
Mult Dev A/T Site 26/Feb/2021.pdf
PCN Lòt
Mult Dev Lot Code Standardization 11/Nov/2022.pdf
Fich
IRFR2407, IRFU2407.pdf

Shipment

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IRFR2407TRPBF Image

IRFR2407TRPBF

Infineon Technologies
32D-IRFR2407TRPBF

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