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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFS17N20D
IRFS17N20D Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFS17N20D - Infineon Technologies

Manifakti Nimewo Pati
IRFS17N20D
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFS17N20D
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 200V 16A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRF(B,S,SL)17N20D.pdf
Nan stok: 4200

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Kantite

Espesifikasyon

Espesifikasyon IRFS17N20D Tech
Infineon Technologies - IRFS17N20D espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFS17N20D

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 5.5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 170mOhm @ 9.8A, 10V  
Dissipasyon pouvwa (Max) 3.8W (Ta), 140W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1100 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 50 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFS17N20D.

Pwodwi atribi IRFS17N20D IRFS11N50ATRLP IRFS17N20DPBF IRFS17N20DTRLP
Nimewo Pati IRFS17N20D IRFS11N50ATRLP IRFS17N20DPBF IRFS17N20DTRLP
Manifakti Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies
Vgs (Max) ±30V ±30V ±30V ±30V
Drenaj Sous Voltage (Vdss) 200 V 500 V 200 V 200 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Dissipasyon pouvwa (Max) 3.8W (Ta), 140W (Tc) 170W (Tc) 3.8W (Ta), 140W (Tc) 3.8W (Ta), 140W (Tc)
Vgs (th) (Max) @ Id 5.5V @ 250µA 4V @ 250µA 5.5V @ 250µA 5.5V @ 250µA
Pakèt Tube Tape & Reel (TR) Tube Tape & Reel (TR)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Founisè Aparèy pake D2PAK TO-263AB D2PAK D2PAK
Pòtay Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 52 nC @ 10 V 50 nC @ 10 V 50 nC @ 10 V
Kapasite Antre (Ciss) (Max) @ Vds 1100 pF @ 25 V 1423 pF @ 25 V 1100 pF @ 25 V 1100 pF @ 25 V
Seri HEXFET® - HEXFET® HEXFET®
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Tc) 11A (Tc) 16A (Tc) 16A (Tc)
Rds Sou (Max) @ Id, Vgs 170mOhm @ 9.8A, 10V 520mOhm @ 6.6A, 10V 170mOhm @ 9.8A, 10V 170mOhm @ 9.8A, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature - - - -

IRFS17N20D fich PDF

Download IRFS17N20D PDF fich ak dokiman Infineon Technologies pou IRFS17N20D - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
EOL122B 02/Oct/2007.pdf
Fich
IRF(B,S,SL)17N20D.pdf

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IRFS17N20D Image

IRFS17N20D

Infineon Technologies
32D-IRFS17N20D

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