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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFS3207ZTRRPBF
IRFS3207ZTRRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFS3207ZTRRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFS3207ZTRRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFS3207ZTRRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 75V 120A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRFS3207ZTRRPBF.pdf
RoHs Status
Nan stok: 14910

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Espesifikasyon

Espesifikasyon IRFS3207ZTRRPBF Tech
Infineon Technologies - IRFS3207ZTRRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFS3207ZTRRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 150µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 4.1mOhm @ 75A, 10V  
Dissipasyon pouvwa (Max) 300W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 6920 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 170 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 75 V  
Kouran - Kontini Drain (Id) @ 25 ° C 120A (Tc)  
Nimewo pwodwi baz IRFS3207  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFS3207ZTRRPBF.

Pwodwi atribi IRFS3207ZTRRPBF IRFS3207ZPBF IRFS3306TRLPBF IRFS3207TRLPBF
Nimewo Pati IRFS3207ZTRRPBF IRFS3207ZPBF IRFS3306TRLPBF IRFS3207TRLPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pòtay Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 170 nC @ 10 V 120 nC @ 10 V 260 nC @ 10 V
Nimewo pwodwi baz IRFS3207 - IRFS3306 IRFS3207
Rds Sou (Max) @ Id, Vgs 4.1mOhm @ 75A, 10V 4.1mOhm @ 75A, 10V 4.2mOhm @ 75A, 10V 4.5mOhm @ 75A, 10V
Drenaj Sous Voltage (Vdss) 75 V 75 V 60 V 75 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Dissipasyon pouvwa (Max) 300W (Tc) 300W (Tc) 230W (Tc) 300W (Tc)
Founisè Aparèy pake D²PAK (TO-263) D²PAK (TO-263) D2PAK D2PAK
Vgs (th) (Max) @ Id 4V @ 150µA 4V @ 150µA 4V @ 150µA 4V @ 250µA
Fèt tip N-Channel N-Channel N-Channel N-Channel
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri HEXFET® HEXFET® HEXFET® HEXFET®
FET Feature - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±20V ±20V ±20V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 6920 pF @ 50 V 6920 pF @ 50 V 4520 pF @ 50 V 7600 pF @ 50 V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kouran - Kontini Drain (Id) @ 25 ° C 120A (Tc) 120A (Tc) 120A (Tc) 170A (Tc)
Pakèt Tape & Reel (TR) Tube Tape & Reel (TR) Tape & Reel (TR)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)

IRFS3207ZTRRPBF fich PDF

Download IRFS3207ZTRRPBF PDF fich ak dokiman Infineon Technologies pou IRFS3207ZTRRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Mult Device Standard Label Chg 29/Sep/2017.pdf Barcode Label Update 24/Feb/2017.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf Material Chg 24/Nov/2015.pdf
Asanble PCN/orijin
Mult Dev A/T Add 7/Feb/2022.pdf
PCN obsolescence/ eol
Multiple Devices 25/Apr/2014.pdf Revision with Removed Parts 10/Oct/2014.pdf

Shipment

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IRFS3207ZTRRPBF Image

IRFS3207ZTRRPBF

Infineon Technologies
32D-IRFS3207ZTRRPBF

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