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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFS59N10DPBF
International Rectifier
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFS59N10DPBF - International Rectifier

Manifakti Nimewo Pati
IRFS59N10DPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFS59N10DPBF
ECAD modèl
Pati Deskripsyon
SMPS HEXFET POWER MOSFET
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRFS59N10DPBF.pdf
RoHs Status
Nan stok: 5300

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Espesifikasyon

Espesifikasyon IRFS59N10DPBF Tech
International Rectifier - IRFS59N10DPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak International Rectifier - IRFS59N10DPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 5.5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 25mOhm @ 35.4A, 10V  
Dissipasyon pouvwa (Max) 3.8W (Ta), 200W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2450 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 114 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 59A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou International Rectifier IRFS59N10DPBF.

Pwodwi atribi IRFS59N10DPBF IRFS5620PBF IRFS5620TRLPBF IRFS630B
Nimewo Pati IRFS59N10DPBF IRFS5620PBF IRFS5620TRLPBF IRFS630B
Manifakti International Rectifier Infineon Technologies Infineon Technologies Fairchild Semiconductor
Vgs (Max) ±30V ±20V ±20V -
Pakèt Bulk Tube Tape & Reel (TR) Bulk
Drenaj Sous Voltage (Vdss) 100 V 200 V 200 V -
Kapasite Antre (Ciss) (Max) @ Vds 2450 pF @ 25 V 1710 pF @ 50 V 1710 pF @ 50 V -
Seri HEXFET® - - *
Pòtay Charge (Qg) (Max) @ Vgs 114 nC @ 10 V 38 nC @ 10 V 38 nC @ 10 V -
Founisè Aparèy pake D2PAK D2PAK D2PAK -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V -
Rds Sou (Max) @ Id, Vgs 25mOhm @ 35.4A, 10V 77.5mOhm @ 15A, 10V 77.5mOhm @ 15A, 10V -
Fèt tip N-Channel N-Channel N-Channel -
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Vgs (th) (Max) @ Id 5.5V @ 250µA 5V @ 100µA 5V @ 100µA -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Kouran - Kontini Drain (Id) @ 25 ° C 59A (Tc) 24A (Tc) 24A (Tc) -
Dissipasyon pouvwa (Max) 3.8W (Ta), 200W (Tc) 144W (Tc) 144W (Tc) -
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB -
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount -

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
International Rectifier

IRFS59N10DPBF

International Rectifier
32D-IRFS59N10DPBF

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