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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFSL4410ZPBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFSL4410ZPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFSL4410ZPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFSL4410ZPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 97A TO262
Deskripsyon detaye
Pake
TO-262-3 Long Leads, I²Pak, TO-262AA
Done fèy
IRFSL4410ZPBF.pdf
RoHs Status
Nan stok: 24675

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRFSL4410ZPBF Tech
Infineon Technologies - IRFSL4410ZPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFSL4410ZPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 150µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-262  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 9mOhm @ 58A, 10V  
Dissipasyon pouvwa (Max) 230W (Tc)  
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 4820 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 120 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 97A (Tc)  
Nimewo pwodwi baz IRFSL4410  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFSL4410ZPBF.

Pwodwi atribi IRFSL4410ZPBF IRFSL7437PBF IRFSL7440PBF IRFSL4310ZPBF
Nimewo Pati IRFSL4410ZPBF IRFSL7437PBF IRFSL7440PBF IRFSL4310ZPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies International Rectifier
Rds Sou (Max) @ Id, Vgs 9mOhm @ 58A, 10V 1.8mOhm @ 100A, 10V 2.5mOhm @ 100A, 10V 6mOhm @ 75A, 10V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 6V, 10V 6V, 10V 10V
Pakèt Tube Tube Tube Bulk
Founisè Aparèy pake TO-262 TO-262 TO-262 TO-262
Dissipasyon pouvwa (Max) 230W (Tc) 230W (Tc) 208W (Tc) 250W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Seri HEXFET® HEXFET®, StrongIRFET™ HEXFET®, StrongIRFET™ HEXFET®
Kouran - Kontini Drain (Id) @ 25 ° C 97A (Tc) 195A (Tc) 120A (Tc) 120A (Tc)
Drenaj Sous Voltage (Vdss) 100 V 40 V 40 V 100 V
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Nimewo pwodwi baz IRFSL4410 IRFSL7437 IRFSL7440 -
Vgs (th) (Max) @ Id 4V @ 150µA 3.9V @ 150µA 3.9V @ 100µA 4V @ 150µA
Pòtay Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 225 nC @ 10 V 135 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 4820 pF @ 50 V 7330 pF @ 25 V 4730 pF @ 25 V 6860 pF @ 50 V

IRFSL4410ZPBF fich PDF

Download IRFSL4410ZPBF PDF fich ak dokiman Infineon Technologies pou IRFSL4410ZPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs 8/Sep/2021.pdf Mult Dev Label Chgs Aug/2020.pdf
PCN anbalaj
Mult Dev Label Chgs 18/Feb/2020.pdf Tube Pkg MOQ Standardization 28/Jul/2017.pdf
Asanble PCN/orijin
Back End Processing Transfer REV 11/Aug/2016.pdf

Shipment

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Sètifikasyon & Manm

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Infineon Technologies

IRFSL4410ZPBF

Infineon Technologies
32D-IRFSL4410ZPBF

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