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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFU2905ZPBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFU2905ZPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFU2905ZPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFU2905ZPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 55V 42A IPAK
Deskripsyon detaye
Pake
TO-251-3 Short Leads, IPak, TO-251AA
Done fèy
IRFU2905ZPBF.pdf
Nan stok: 3620

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFU2905ZPBF Tech
Infineon Technologies - IRFU2905ZPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFU2905ZPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake IPAK (TO-251AA)  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 14.5mOhm @ 36A, 10V  
Dissipasyon pouvwa (Max) 110W (Tc)  
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1380 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 44 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 55 V  
Kouran - Kontini Drain (Id) @ 25 ° C 42A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFU2905ZPBF.

Pwodwi atribi IRFU2905ZPBF IRFU320 IRFU320 IRFU2405PBF
Nimewo Pati IRFU2905ZPBF IRFU320 IRFU320 IRFU2405PBF
Manifakti Infineon Technologies Harris Corporation Vishay Siliconix International Rectifier
Kouran - Kontini Drain (Id) @ 25 ° C 42A (Tc) 3.1A (Tc) 3.1A (Tc) 56A (Tc)
Drenaj Sous Voltage (Vdss) 55 V 400 V 400 V 55 V
Founisè Aparèy pake IPAK (TO-251AA) TO-251AA TO-251AA IPAK (TO-251AA)
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V - 10V 10V
Seri HEXFET® - - -
Rds Sou (Max) @ Id, Vgs 14.5mOhm @ 36A, 10V 1.8Ohm @ 1.9A, 10V 1.8Ohm @ 1.9A, 10V 16mOhm @ 34A, 10V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Dissipasyon pouvwa (Max) 110W (Tc) 2.5W (Ta), 42W (Tc) 2.5W (Ta), 42W (Tc) 110W (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 1380 pF @ 25 V 350 pF @ 25 V 350 pF @ 25 V 2430 pF @ 25 V
Pakèt Tube Bulk Tube Bulk
Fèt tip N-Channel N-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 20 nC @ 10 V 20 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
FET Feature - - - -
Mounting Kalite Through Hole Through Hole Through Hole Through Hole

IRFU2905ZPBF fich PDF

Download IRFU2905ZPBF PDF fich ak dokiman Infineon Technologies pou IRFU2905ZPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
Asanble PCN/orijin
Backend Wafer Transfer 23/Oct/2013.pdf
PCN obsolescence/ eol
Multiple Devices 25/Apr/2014.pdf

Shipment

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Infineon Technologies

IRFU2905ZPBF

Infineon Technologies
32D-IRFU2905ZPBF

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