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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFU3410PBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFU3410PBF - Infineon Technologies

Manifakti Nimewo Pati
IRFU3410PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFU3410PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 31A IPAK
Deskripsyon detaye
Pake
TO-251-3 Short Leads, IPak, TO-251AA
Done fèy
IRFU3410PBF.pdf
RoHs Status
Nan stok: 81680

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFU3410PBF Tech
Infineon Technologies - IRFU3410PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFU3410PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake IPAK (TO-251AA)  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 39mOhm @ 18A, 10V  
Dissipasyon pouvwa (Max) 3W (Ta), 110W (Tc)  
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1690 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 56 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 31A (Tc)  
Nimewo pwodwi baz IRFU3410  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFU3410PBF.

Pwodwi atribi IRFU3410PBF IRFU3504ZPBF IRFU320 IRFU3303PBF
Nimewo Pati IRFU3410PBF IRFU3504ZPBF IRFU320 IRFU3303PBF
Manifakti Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies
Rds Sou (Max) @ Id, Vgs 39mOhm @ 18A, 10V 9mOhm @ 42A, 10V 1.8Ohm @ 1.9A, 10V 31mOhm @ 18A, 10V
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Dissipasyon pouvwa (Max) 3W (Ta), 110W (Tc) 90W (Tc) 2.5W (Ta), 42W (Tc) 57W (Tc)
Nimewo pwodwi baz IRFU3410 - IRFU3 -
Founisè Aparèy pake IPAK (TO-251AA) IPAK (TO-251AA) TO-251AA IPAK (TO-251AA)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 31A (Tc) 42A (Tc) 3.1A (Tc) 33A (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pakèt Tube Tube Tube Tube
Vgs (Max) ±20V ±20V ±20V ±20V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 100 V 40 V 400 V 30 V
Kapasite Antre (Ciss) (Max) @ Vds 1690 pF @ 25 V 1510 pF @ 25 V 350 pF @ 25 V 750 pF @ 25 V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Seri HEXFET® HEXFET® - HEXFET®
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Pòtay Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 45 nC @ 10 V 20 nC @ 10 V 29 nC @ 10 V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA

IRFU3410PBF fich PDF

Download IRFU3410PBF PDF fich ak dokiman Infineon Technologies pou IRFU3410PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs 8/Sep/2021.pdf Mult Dev Label Chgs Aug/2020.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Mult Device Standard Label Chg 29/Sep/2017.pdf
PCN Lòt
Mult Dev Lot Code Standardization 11/Nov/2022.pdf
Asanble PCN/orijin
Mult Dev Wafer Chgs 31/Aug/2021.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IRFU3410PBF

Infineon Technologies
32D-IRFU3410PBF

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