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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleIRG4BC10SD
IRG4BC10SD Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
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IRG4BC10SD - Infineon Technologies

Manifakti Nimewo Pati
IRG4BC10SD
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRG4BC10SD
ECAD modèl
Pati Deskripsyon
IGBT 600V 14A 38W TO220AB
Pake
TO-220-3
Done fèy
IRG4BC10SD.pdf
Sètifikasyon nou an
Nan stok: 4710

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Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IRG4BC10SD Tech
Infineon Technologies - IRG4BC10SD espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRG4BC10SD

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Voltage - Pèseptè Emitter pann (Max) 600 V  
Vce (sou) (Max) @ Vge, Ic 1.8V @ 15V, 8A  
Kondisyon tès 480V, 8A, 100Ohm, 15V  
Td (sou / sou) @ 25 ° C 76ns/815ns  
Oblije chanje enèji 310µJ (on), 3.28mJ (off)  
Founisè Aparèy pake TO-220AB  
Seri -  
Tan rekiperasyon ranvèse (trr) 28 ns  
Pouvwa - Max 38 W  
Pwodwi atribi Valè atribi  
Pake / Ka TO-220-3  
Pakèt Tube  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite Antre Standard  
IGBT Kalite -  
Gate Charge 15 nC  
Kouran - Pèseptè Pulsed (Icm) 18 A  
Kouran - Pèseptè (Ic) (Max) 14 A  
Nimewo pwodwi baz IRG4BC10  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status RoHS ki pa konfòme
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRG4BC10SD.

Pwodwi atribi IRG4BC10SD IRG4BC15MDPBF IRG4BC10K IRG4BC10UPBF
Nimewo Pati IRG4BC10SD IRG4BC15MDPBF IRG4BC10K IRG4BC10UPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pakèt Tube Tube Tube Tube
Kouran - Pèseptè Pulsed (Icm) 18 A 28 A 18 A 34 A
Td (sou / sou) @ 25 ° C 76ns/815ns 21ns/540ns 11ns/51ns 40ns/87ns
Voltage - Pèseptè Emitter pann (Max) 600 V 600 V 600 V 600 V
Kondisyon tès 480V, 8A, 100Ohm, 15V 480V, 8.6A, 75Ohm, 15V 480V, 5A, 100Ohm, 15V 480V, 5A, 100Ohm, 15V
Vce (sou) (Max) @ Vge, Ic 1.8V @ 15V, 8A 2.3V @ 15V, 8.6A 2.62V @ 15V, 5A 2.6V @ 15V, 5A
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Tan rekiperasyon ranvèse (trr) 28 ns 28 ns - 28 ns
Oblije chanje enèji 310µJ (on), 3.28mJ (off) 320µJ (on), 1.93mJ (off) 160µJ (on), 100µJ (off) 140µJ (on), 120µJ (off)
Kalite Antre Standard Standard Standard Standard
Pouvwa - Max 38 W 49 W 38 W 38 W
Nimewo pwodwi baz IRG4BC10 IRG4BC15 - IRG4BC10
Founisè Aparèy pake TO-220AB TO-220AB TO-220AB TO-220AB
Seri - - - -
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Gate Charge 15 nC 46 nC 19 nC 15 nC
IGBT Kalite - - - -
Kouran - Pèseptè (Ic) (Max) 14 A 14 A 9 A 8.5 A
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3

IRG4BC10SD fich PDF

Download IRG4BC10SD PDF fich ak dokiman Infineon Technologies pou IRG4BC10SD - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN obsolescence/ eol
EOL122B 02/Oct/2007.pdf
Fich
IRG4BC10SD.pdf

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IRG4BC10SD

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32D-IRG4BC10SD

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