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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRLML6344TRPBF
IRLML6344TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRLML6344TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRLML6344TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRLML6344TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 5A MICRO3/SOT23
Deskripsyon detaye
Pake
TO-236-3, SC-59, SOT-23-3
Done fèy
IRLML6344TRPBF.pdf
RoHs Status
Nan stok: 186310

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRLML6344TRPBF Tech
Infineon Technologies - IRLML6344TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRLML6344TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 1.1V @ 10µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake Micro3™/SOT-23  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 29mOhm @ 5A, 4.5V  
Dissipasyon pouvwa (Max) 1.3W (Ta)  
Pake / Ka TO-236-3, SC-59, SOT-23-3  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 650 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 6.8 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 5A (Ta)  
Nimewo pwodwi baz IRLML6344  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRLML6344TRPBF.

Pwodwi atribi IRLML6344TRPBF IRLML6346TRPBF IRLML6302GTRPBF IRLML6246TRPBF
Nimewo Pati IRLML6344TRPBF IRLML6346TRPBF IRLML6302GTRPBF IRLML6246TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip N-Channel N-Channel - N-Channel
Vgs (th) (Max) @ Id 1.1V @ 10µA 1.1V @ 10µA 600 mOhm @ 610mA, 4.5V 1.1V @ 5µA
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Nimewo pwodwi baz IRLML6344 IRLML6346 - IRLML6246
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 650 pF @ 25 V 270 pF @ 24 V 3.6nC @ 4.5V 290 pF @ 16 V
Pake / Ka TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3
Pakèt Tape & Reel (TR) Tape & Reel (TR) - Tape & Reel (TR)
Pòtay Charge (Qg) (Max) @ Vgs 6.8 nC @ 4.5 V 2.9 nC @ 4.5 V 1.5V @ 250µA 3.5 nC @ 4.5 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 2.5V, 4.5V - 2.5V, 4.5V
Seri HEXFET® HEXFET® HEXFET® HEXFET®
FET Feature - - P-Channel -
Kouran - Kontini Drain (Id) @ 25 ° C 5A (Ta) 3.4A (Ta) 20V 4.1A (Ta)
Founisè Aparèy pake Micro3™/SOT-23 Micro3™/SOT-23 - Micro3™/SOT-23
Drenaj Sous Voltage (Vdss) 30 V 30 V - 20 V
Vgs (Max) ±12V ±12V 2.7V, 4.5V ±12V
Dissipasyon pouvwa (Max) 1.3W (Ta) 1.3W (Ta) - 1.3W (Ta)
Rds Sou (Max) @ Id, Vgs 29mOhm @ 5A, 4.5V 63mOhm @ 3.4A, 4.5V 780mA (Ta) 46mOhm @ 4.1A, 4.5V

IRLML6344TRPBF fich PDF

Download IRLML6344TRPBF PDF fich ak dokiman Infineon Technologies pou IRLML6344TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Label Chgs 18/Feb/2020.pdf Barcode Label Update 24/Feb/2017.pdf
PCN konsepsyon/spesifikasyon
Mult Dev DC/Mark Chgs 20/Jul/2022.pdf Standardized Format 21/Jun/2023.pdf
Asanble PCN/orijin
Mult Mosfet Dev Wafer/Test Site Add 8/Aug/2017.pdf

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    +00852 9146 4856

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IRLML6344TRPBF Image

IRLML6344TRPBF

Infineon Technologies
32D-IRLML6344TRPBF

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