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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRLR024NTRLPBF
IRLR024NTRLPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRLR024NTRLPBF - Infineon Technologies

Manifakti Nimewo Pati
IRLR024NTRLPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRLR024NTRLPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 55V 17A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IRLR024NTRLPBF.pdf
RoHs Status
Nan stok: 67250

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Espesifikasyon

Espesifikasyon IRLR024NTRLPBF Tech
Infineon Technologies - IRLR024NTRLPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRLR024NTRLPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±16V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D-Pak  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 65mOhm @ 10A, 10V  
Dissipasyon pouvwa (Max) 45W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 480 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 15 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V  
Drenaj Sous Voltage (Vdss) 55 V  
Kouran - Kontini Drain (Id) @ 25 ° C 17A (Tc)  
Nimewo pwodwi baz IRLR024  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRLR024NTRLPBF.

Pwodwi atribi IRLR024NTRLPBF IRLR024TRPBF IRLR024 IRLR024NTRRPBF
Nimewo Pati IRLR024NTRLPBF IRLR024TRPBF IRLR024 IRLR024NTRRPBF
Manifakti Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies
Vgs (Max) ±16V ±10V ±10V ±16V
Rds Sou (Max) @ Id, Vgs 65mOhm @ 10A, 10V 100mOhm @ 8.4A, 5V 100mOhm @ 8.4A, 5V 65mOhm @ 10A, 10V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
FET Feature - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V 4V, 5V 4V, 5V 4V, 10V
Founisè Aparèy pake D-Pak D-Pak D-Pak D-Pak
Kouran - Kontini Drain (Id) @ 25 ° C 17A (Tc) 14A (Tc) 14A (Tc) 17A (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Drenaj Sous Voltage (Vdss) 55 V 60 V 60 V 55 V
Pòtay Charge (Qg) (Max) @ Vgs 15 nC @ 5 V 18 nC @ 5 V 18 nC @ 5 V 15 nC @ 5 V
Kapasite Antre (Ciss) (Max) @ Vds 480 pF @ 25 V 870 pF @ 25 V 870 pF @ 25 V 480 pF @ 25 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tube Tape & Reel (TR)
Nimewo pwodwi baz IRLR024 IRLR024 IRLR024 -
Seri HEXFET® - - HEXFET®
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA
Dissipasyon pouvwa (Max) 45W (Tc) 2.5W (Ta), 42W (Tc) 2.5W (Ta), 42W (Tc) 45W (Tc)

IRLR024NTRLPBF fich PDF

Download IRLR024NTRLPBF PDF fich ak dokiman Infineon Technologies pou IRLR024NTRLPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Mult Dev Label Chgs 18/Feb/2020.pdf
PCN Lòt
Mult Dev Lot Code Standardization 11/Nov/2022.pdf
Asanble PCN/orijin
Mult Dev Wafer Chg 18/Dec/2020.pdf

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IRLR024NTRLPBF Image

IRLR024NTRLPBF

Infineon Technologies
32D-IRLR024NTRLPBF

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