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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRLR3110ZTRLPBF
IRLR3110ZTRLPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRLR3110ZTRLPBF - Infineon Technologies

Manifakti Nimewo Pati
IRLR3110ZTRLPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRLR3110ZTRLPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 42A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IRLR3110ZTRLPBF.pdf
RoHs Status
Nan stok: 32150

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRLR3110ZTRLPBF Tech
Infineon Technologies - IRLR3110ZTRLPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRLR3110ZTRLPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.5V @ 100µA  
Vgs (Max) ±16V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D-Pak  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 14mOhm @ 38A, 10V  
Dissipasyon pouvwa (Max) 140W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3980 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 48 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 42A (Tc)  
Nimewo pwodwi baz IRLR3110  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRLR3110ZTRLPBF.

Pwodwi atribi IRLR3110ZTRLPBF IRLR3303PBF IRLR3110ZTRPBF IRLR3110ZPBF
Nimewo Pati IRLR3110ZTRLPBF IRLR3303PBF IRLR3110ZTRPBF IRLR3110ZPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max) ±16V ±16V ±16V ±16V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 42A (Tc) 35A (Tc) 42A (Tc) 42A (Tc)
Nimewo pwodwi baz IRLR3110 - IRLR3110 -
Founisè Aparèy pake D-Pak D-Pak D-Pak D-Pak
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Rds Sou (Max) @ Id, Vgs 14mOhm @ 38A, 10V 31mOhm @ 21A, 10V 14mOhm @ 38A, 10V 14mOhm @ 38A, 10V
Dissipasyon pouvwa (Max) 140W (Tc) 68W (Tc) 140W (Tc) 140W (Tc)
FET Feature - - - -
Vgs (th) (Max) @ Id 2.5V @ 100µA 1V @ 250µA 2.5V @ 100µA 2.5V @ 100µA
Kapasite Antre (Ciss) (Max) @ Vds 3980 pF @ 25 V 870 pF @ 25 V 3980 pF @ 25 V 3980 pF @ 25 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pakèt Tape & Reel (TR) Tube Tape & Reel (TR) Tube
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Drenaj Sous Voltage (Vdss) 100 V 30 V 100 V 100 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Pòtay Charge (Qg) (Max) @ Vgs 48 nC @ 4.5 V 26 nC @ 4.5 V 48 nC @ 4.5 V 48 nC @ 4.5 V

IRLR3110ZTRLPBF fich PDF

Download IRLR3110ZTRLPBF PDF fich ak dokiman Infineon Technologies pou IRLR3110ZTRLPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Mult Dev Label Chgs 18/Feb/2020.pdf
Asanble PCN/orijin
Warehouse Transfer 29/Jul/2015.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf Mult Dev Lot Chgs 25/May/2021.pdf

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IRLR3110ZTRLPBF Image

IRLR3110ZTRLPBF

Infineon Technologies
32D-IRLR3110ZTRLPBF

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