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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRLR7811WCPBF
IRLR7811WCPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRLR7811WCPBF - Infineon Technologies

Manifakti Nimewo Pati
IRLR7811WCPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRLR7811WCPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 64A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IRLR7811WCPbF.pdf
Nan stok: 4940

Jaden obligatwa yo endike pa yon asterisk (*)
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Espesifikasyon

Espesifikasyon IRLR7811WCPBF Tech
Infineon Technologies - IRLR7811WCPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRLR7811WCPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D-Pak  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 10.5mOhm @ 15A, 10V  
Dissipasyon pouvwa (Max) 71W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2260 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 31 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 64A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRLR7811WCPBF.

Pwodwi atribi IRLR7811WCPBF IRLR7811WPBF IRLR7807ZCPBF IRLR7807ZTR
Nimewo Pati IRLR7811WCPBF IRLR7811WPBF IRLR7807ZCPBF IRLR7807ZTR
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.25V @ 250µA 2.25V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 64A (Tc) 64A (Tc) 43A (Tc) 43A (Tc)
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Kapasite Antre (Ciss) (Max) @ Vds 2260 pF @ 15 V 2260 pF @ 15 V 780 pF @ 15 V 780 pF @ 15 V
Pòtay Charge (Qg) (Max) @ Vgs 31 nC @ 4.5 V 31 nC @ 4.5 V 11 nC @ 4.5 V 11 nC @ 4.5 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
FET Feature - - - -
Vgs (Max) ±12V ±12V ±20V ±20V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Dissipasyon pouvwa (Max) 71W (Tc) 71W (Tc) 40W (Tc) 40W (Tc)
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 10.5mOhm @ 15A, 10V 10.5mOhm @ 15A, 10V 13.8mOhm @ 15A, 10V 13.8mOhm @ 15A, 10V
Founisè Aparèy pake D-Pak D-Pak D-Pak D-Pak
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Pakèt Tube Tube Tube Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

IRLR7811WCPBF fich PDF

Download IRLR7811WCPBF PDF fich ak dokiman Infineon Technologies pou IRLR7811WCPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
Fich
IRLR7811WCPbF.pdf

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IRLR7811WCPBF

Infineon Technologies
32D-IRLR7811WCPBF

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