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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRLR8259PBF
International Rectifier
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRLR8259PBF - International Rectifier

Manifakti Nimewo Pati
IRLR8259PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRLR8259PBF
ECAD modèl
Pati Deskripsyon
HEXFET POWER MOSFET
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IRLR8259PBF.pdf
RoHs Status
Nan stok: 5280

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

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Espesifikasyon

Espesifikasyon IRLR8259PBF Tech
International Rectifier - IRLR8259PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak International Rectifier - IRLR8259PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.35V @ 25µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D-Pak  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 8.7mOhm @ 21A, 10V  
Dissipasyon pouvwa (Max) 48W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 900 pF @ 13 V  
Pòtay Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 25 V  
Kouran - Kontini Drain (Id) @ 25 ° C 57A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou International Rectifier IRLR8259PBF.

Pwodwi atribi IRLR8259PBF IRLR8503TR IRLR8503TRPBF IRLR8256TRPBF
Nimewo Pati IRLR8259PBF IRLR8503TR IRLR8503TRPBF IRLR8256TRPBF
Manifakti International Rectifier Infineon Technologies Infineon Technologies International Rectifier
FET Feature - - - -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Pakèt Bulk Tape & Reel (TR) Tape & Reel (TR) Bulk
Kouran - Kontini Drain (Id) @ 25 ° C 57A (Tc) 44A (Tc) 44A (Tc) 81A (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Founisè Aparèy pake D-Pak D-Pak D-Pak D-Pak
Dissipasyon pouvwa (Max) 48W (Tc) 62W (Tc) 62W (Tc) 63W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 20 nC @ 5 V 20 nC @ 5 V 15 nC @ 4.5 V
Vgs (th) (Max) @ Id 2.35V @ 25µA 3V @ 250µA 3V @ 250µA 2.35V @ 25µA
Rds Sou (Max) @ Id, Vgs 8.7mOhm @ 21A, 10V 16mOhm @ 15A, 10V 16mOhm @ 15A, 10V 5.7mOhm @ 25A, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Kapasite Antre (Ciss) (Max) @ Vds 900 pF @ 13 V 1650 pF @ 25 V 1650 pF @ 25 V 1470 pF @ 13 V
Drenaj Sous Voltage (Vdss) 25 V 30 V 30 V 25 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±20V ±20V ±20V ±20V

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
International Rectifier

IRLR8259PBF

International Rectifier
32D-IRLR8259PBF

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