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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSDT08S60
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SDT08S60 - Infineon Technologies

Manifakti Nimewo Pati
SDT08S60
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-SDT08S60
ECAD modèl
Pati Deskripsyon
DIODE SIL CARB 600V 8A TO220-2-2
Deskripsyon detaye
Pake
TO-220-2
Done fèy
SDT08S60.pdf
Nan stok: 3810

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Kantite

Espesifikasyon

Espesifikasyon SDT08S60 Tech
Infineon Technologies - SDT08S60 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - SDT08S60

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Voltage - Forward (Vf) (Max) @ Si 1.7 V @ 8 A  
Voltage - DC ranvèse (Vr) (Max) 600 V  
Teknoloji SiC (Silicon Carbide) Schottky  
Founisè Aparèy pake PG-TO220-2-2  
Vitès No Recovery Time > 500mA (Io)  
Seri CoolSiC™+  
Tan rekiperasyon ranvèse (trr) 0 ns  
Pwodwi atribi Valè atribi  
Pake / Ka TO-220-2  
Pakèt Tube  
Operating Tanperati - Junction -55°C ~ 175°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 300 µA @ 600 V  
Kouran - Mwayèn Rectified (Io) 8A  
Kapasite @ Vr, F 280pF @ 0V, 1MHz  
Nimewo pwodwi baz SDT08S  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies SDT08S60.

Pwodwi atribi SDT08S60 SDT06S60 SDT04S60 SDT05H
Nimewo Pati SDT08S60 SDT06S60 SDT04S60 SDT05H
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies AUK
Mounting Kalite Through Hole Through Hole Through Hole -
Voltage - DC ranvèse (Vr) (Max) 600 V 600 V 600 V -
Kouran - Reverse Leakage @ Vr 300 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V -
Operating Tanperati - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -
Founisè Aparèy pake PG-TO220-2-2 PG-TO220-2-2 PG-TO220-2-2 -
Voltage - Forward (Vf) (Max) @ Si 1.7 V @ 8 A 1.7 V @ 6 A 1.9 V @ 4 A -
Seri CoolSiC™+ CoolSiC™+ CoolSiC™+ -
Pakèt Tube Tube Tube -
Nimewo pwodwi baz SDT08S SDT06S SDT04S -
Tan rekiperasyon ranvèse (trr) 0 ns 0 ns 0 ns -
Kapasite @ Vr, F 280pF @ 0V, 1MHz 300pF @ 0V, 1MHz 150pF @ 0V, 1MHz -
Pake / Ka TO-220-2 TO-220-2 TO-220-2 -
Kouran - Mwayèn Rectified (Io) 8A 6A 4A -
Vitès No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) -
Teknoloji SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky -

SDT08S60 fich PDF

Download SDT08S60 PDF fich ak dokiman Infineon Technologies pou SDT08S60 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN obsolescence/ eol
Multiple Devices 10/Jun/2010.pdf
Fich
SDT08S60.pdf

Shipment

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Sètifikasyon & Manm

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Infineon Technologies

SDT08S60

Infineon Technologies
32D-SDT08S60

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