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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSDT10S30
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SDT10S30 - Infineon Technologies

Manifakti Nimewo Pati
SDT10S30
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-SDT10S30
ECAD modèl
Pati Deskripsyon
DIODE SIL CARB 300V 10A TO220-2
Deskripsyon detaye
Pake
TO-220-2
Done fèy
SDP10S30, SDT10S30.pdf
Nan stok: 5070

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SDT10S30 Tech
Infineon Technologies - SDT10S30 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - SDT10S30

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Voltage - Forward (Vf) (Max) @ Si 1.7 V @ 10 A  
Voltage - DC ranvèse (Vr) (Max) 300 V  
Teknoloji SiC (Silicon Carbide) Schottky  
Founisè Aparèy pake PG-TO220-2-2  
Vitès No Recovery Time > 500mA (Io)  
Seri CoolSiC™+  
Tan rekiperasyon ranvèse (trr) 0 ns  
Pwodwi atribi Valè atribi  
Pake / Ka TO-220-2  
Pakèt Tube  
Operating Tanperati - Junction -55°C ~ 175°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 200 µA @ 300 V  
Kouran - Mwayèn Rectified (Io) 10A  
Kapasite @ Vr, F 600pF @ 0V, 1MHz  
Nimewo pwodwi baz SDT10S  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies SDT10S30.

Pwodwi atribi SDT10S30 SDT12S60 SDT10A100P5-7 SDT10A45P5-13
Nimewo Pati SDT10S30 SDT12S60 SDT10A100P5-7 SDT10A45P5-13
Manifakti Infineon Technologies Infineon Technologies Diodes Incorporated Diodes Incorporated
Pakèt Tube Tube Tape & Reel (TR) Tape & Reel (TR)
Kapasite @ Vr, F 600pF @ 0V, 1MHz 450pF @ 1V, 1MHz - -
Vitès No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Nimewo pwodwi baz SDT10S SDT12S SDT10 SDT10
Voltage - Forward (Vf) (Max) @ Si 1.7 V @ 10 A 1.7 V @ 12 A 680 mV @ 10 A 470 mV @ 10 A
Pake / Ka TO-220-2 TO-220-2 PowerDI™ 5 PowerDI™ 5
Kouran - Mwayèn Rectified (Io) 10A 12A 10A 10A
Mounting Kalite Through Hole Through Hole Surface Mount Surface Mount
Kouran - Reverse Leakage @ Vr 200 µA @ 300 V 400 µA @ 600 V 100 µA @ 100 V 300 µA @ 45 V
Seri CoolSiC™+ CoolSiC™+ - -
Founisè Aparèy pake PG-TO220-2-2 PG-TO220-2-2 PowerDI™ 5 PowerDI™ 5
Operating Tanperati - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 150°C -55°C ~ 150°C
Voltage - DC ranvèse (Vr) (Max) 300 V 600 V 100 V 45 V
Teknoloji SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky Schottky Schottky
Tan rekiperasyon ranvèse (trr) 0 ns 0 ns - -

SDT10S30 fich PDF

Download SDT10S30 PDF fich ak dokiman Infineon Technologies pou SDT10S30 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
Fich
SDP10S30, SDT10S30.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Infineon Technologies

SDT10S30

Infineon Technologies
32D-SDT10S30

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