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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSPD04P10PLGBTMA1
SPD04P10PLGBTMA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SPD04P10PLGBTMA1 - Infineon Technologies

Manifakti Nimewo Pati
SPD04P10PLGBTMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-SPD04P10PLGBTMA1
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 100V 4.2A TO252-3
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
SPD04P10PLGBTMA1.pdf
RoHs Status
Nan stok: 94810

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Kantite

Espesifikasyon

Espesifikasyon SPD04P10PLGBTMA1 Tech
Infineon Technologies - SPD04P10PLGBTMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - SPD04P10PLGBTMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2V @ 380µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO252-3  
Seri SIPMOS®  
Rds Sou (Max) @ Id, Vgs 850mOhm @ 3A, 10V  
Dissipasyon pouvwa (Max) 38W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 372 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 16 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.2A (Tc)  
Nimewo pwodwi baz SPD04P10  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies SPD04P10PLGBTMA1.

Pwodwi atribi SPD04P10PLGBTMA1 SPD04P10PGBTMA1 SPD06N80C3ATMA1 SPD04P10PG
Nimewo Pati SPD04P10PLGBTMA1 SPD04P10PGBTMA1 SPD06N80C3ATMA1 SPD04P10PG
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Bulk
Drenaj Sous Voltage (Vdss) 100 V 100 V 800 V 100 V
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 4.2A (Tc) 4A (Tc) 6A (Ta) 4A (Tc)
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Pòtay Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 12 nC @ 10 V 41 nC @ 10 V 12 nC @ 10 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±20V ±20V ±20V ±20V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 10V 10V 10V
Dissipasyon pouvwa (Max) 38W (Tc) 38W (Tc) 83W (Tc) 38W (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 372 pF @ 25 V 319 pF @ 25 V 785 pF @ 100 V 319 pF @ 25 V
Founisè Aparèy pake PG-TO252-3 PG-TO252-3 PG-TO252-3 PG-TO252-3-11
Nimewo pwodwi baz SPD04P10 SPD04P10 SPD06N80 -
Seri SIPMOS® SIPMOS® CoolMOS™ SIPMOS®
Rds Sou (Max) @ Id, Vgs 850mOhm @ 3A, 10V 1Ohm @ 2.8A, 10V 900mOhm @ 3.8A, 10V 1Ohm @ 2.8A, 10V
Vgs (th) (Max) @ Id 2V @ 380µA 4V @ 380µA 3.9V @ 250µA 4V @ 380µA
Fèt tip P-Channel P-Channel N-Channel P-Channel

SPD04P10PLGBTMA1 fich PDF

Download SPD04P10PLGBTMA1 PDF fich ak dokiman Infineon Technologies pou SPD04P10PLGBTMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Cover Tape Width Update 17/Jun/2015.pdf Mult Dev Pkg Box Chg 3/Jan/2018.pdf
Asanble PCN/orijin
Lead Plate Supplier Add 26/Apr/2017.pdf

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SPD04P10PLGBTMA1 Image

SPD04P10PLGBTMA1

Infineon Technologies
32D-SPD04P10PLGBTMA1

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