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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSPI08N80C3
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SPI08N80C3 - Infineon Technologies

Manifakti Nimewo Pati
SPI08N80C3
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-SPI08N80C3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 800V 8A TO262-3
Deskripsyon detaye
Pake
TO-262-3 Long Leads, I²Pak, TO-262AA
Done fèy
SPI08N80C3.pdf
Nan stok: 4910

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SPI08N80C3 Tech
Infineon Technologies - SPI08N80C3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - SPI08N80C3

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.9V @ 470µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO262-3  
Seri CoolMOS™  
Rds Sou (Max) @ Id, Vgs 650mOhm @ 5.1A, 10V  
Dissipasyon pouvwa (Max) 104W (Tc)  
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1100 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 60 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 800 V  
Kouran - Kontini Drain (Id) @ 25 ° C 8A (Tc)  
Nimewo pwodwi baz SPI08N  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies SPI08N80C3.

Pwodwi atribi SPI08N80C3 SPI07N60S5 SPI07N60C3 SPI08N50C3
Nimewo Pati SPI08N80C3 SPI07N60S5 SPI07N60C3 SPI08N50C3
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Drenaj Sous Voltage (Vdss) 800 V 600 V 600 V 560 V
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pakèt Bulk Bulk Bulk Bulk
Vgs (th) (Max) @ Id 3.9V @ 470µA 5.5V @ 350µA 3.9V @ 350µA 3.9V @ 350µA
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Fèt tip N-Channel N-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Nimewo pwodwi baz SPI08N - - -
Pòtay Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 35 nC @ 10 V 27 nC @ 10 V 32 nC @ 10 V
Dissipasyon pouvwa (Max) 104W (Tc) 83W (Tc) 83W (Tc) 83W (Tc)
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA
Seri CoolMOS™ CoolMOS™ CoolMOS™ CoolMOS™
Founisè Aparèy pake PG-TO262-3 PG-TO262-3-1 PG-TO262-3-1 PG-TO262-3-1
Kapasite Antre (Ciss) (Max) @ Vds 1100 pF @ 100 V 970 pF @ 25 V 790 pF @ 25 V 750 pF @ 25 V
Vgs (Max) ±20V ±20V ±20V ±20V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Rds Sou (Max) @ Id, Vgs 650mOhm @ 5.1A, 10V 600mOhm @ 4.6A, 10V 600mOhm @ 4.6A, 10V 600mOhm @ 4.6A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 8A (Tc) 7.3A (Tc) 7.3A (Tc) 7.6A (Tc)

SPI08N80C3 fich PDF

Download SPI08N80C3 PDF fich ak dokiman Infineon Technologies pou SPI08N80C3 - Infineon Technologies.

Fich
SPI08N80C3.pdf

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SPI08N80C3

Infineon Technologies
32D-SPI08N80C3

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