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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSPP80N06S2-08
SPP80N06S2-08 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SPP80N06S2-08 - Infineon Technologies

Manifakti Nimewo Pati
SPP80N06S2-08
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-SPP80N06S2-08
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 55V 80A TO220-3
Deskripsyon detaye
Pake
TO-220-3
Done fèy
SP(I,P,B)80N06S2-08.pdf
Nan stok: 3820

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SPP80N06S2-08 Tech
Infineon Technologies - SPP80N06S2-08 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - SPP80N06S2-08

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 150µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO220-3-1  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 8mOhm @ 58A, 10V  
Dissipasyon pouvwa (Max) 215W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 3800 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 96 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 55 V  
Kouran - Kontini Drain (Id) @ 25 ° C 80A (Tc)  
Nimewo pwodwi baz SPP80N  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies SPP80N06S2-08.

Pwodwi atribi SPP80N06S2-08 SPP80N06S2L-06 SPP80N06S2L-11 SPP80N04S2-04
Nimewo Pati SPP80N06S2-08 SPP80N06S2L-06 SPP80N06S2L-11 SPP80N04S2-04
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Drenaj Sous Voltage (Vdss) 55 V 55 V 55 V 40 V
FET Feature - - - -
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 4.5V, 10V 4.5V, 10V 10V
Rds Sou (Max) @ Id, Vgs 8mOhm @ 58A, 10V 6.3mOhm @ 69A, 10V 11mOhm @ 40A, 10V 3.7mOhm @ 80A, 10V
Vgs (th) (Max) @ Id 4V @ 150µA 2V @ 180µA 2V @ 93µA 4V @ 250µA
Seri OptiMOS™ OptiMOS™ OptiMOS™ OptiMOS™
Pakèt Tube Tube Tube Tube
Pòtay Charge (Qg) (Max) @ Vgs 96 nC @ 10 V 150 nC @ 10 V 80 nC @ 10 V 170 nC @ 10 V
Kapasite Antre (Ciss) (Max) @ Vds 3800 pF @ 25 V 5050 pF @ 25 V 2650 pF @ 25 V 6980 pF @ 25 V
Nimewo pwodwi baz SPP80N SPP80N SPP80N SPP80N
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)
Founisè Aparèy pake PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Dissipasyon pouvwa (Max) 215W (Tc) 250W (Tc) 158W (Tc) 300W (Tc)
Vgs (Max) ±20V ±20V ±20V ±20V

SPP80N06S2-08 fich PDF

Download SPP80N06S2-08 PDF fich ak dokiman Infineon Technologies pou SPP80N06S2-08 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
Fich
SP(I,P,B)80N06S2-08.pdf

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SPP80N06S2-08 Image

SPP80N06S2-08

Infineon Technologies
32D-SPP80N06S2-08

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