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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSPP80N10L
SPP80N10L Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SPP80N10L - Infineon Technologies

Manifakti Nimewo Pati
SPP80N10L
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-SPP80N10L
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 80A TO220-3
Deskripsyon detaye
Pake
TO-220-3
Done fèy
SPI,SPP80N10L.pdf
Nan stok: 4580

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Espesifikasyon

Espesifikasyon SPP80N10L Tech
Infineon Technologies - SPP80N10L espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - SPP80N10L

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2V @ 2mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO220-3-1  
Seri SIPMOS®  
Rds Sou (Max) @ Id, Vgs 14mOhm @ 58A, 10V  
Dissipasyon pouvwa (Max) 250W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 4540 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 240 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 80A (Tc)  
Nimewo pwodwi baz SPP80N  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies SPP80N10L.

Pwodwi atribi SPP80N10L SPP80N06S2L-06 SPP80N06S2L-11 SPP80N08S2-07
Nimewo Pati SPP80N10L SPP80N06S2L-06 SPP80N06S2L-11 SPP80N08S2-07
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Nimewo pwodwi baz SPP80N SPP80N SPP80N SPP80N
Pakèt Tube Tube Tube Tube
Founisè Aparèy pake PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Pòtay Charge (Qg) (Max) @ Vgs 240 nC @ 10 V 150 nC @ 10 V 80 nC @ 10 V 180 nC @ 10 V
Rds Sou (Max) @ Id, Vgs 14mOhm @ 58A, 10V 6.3mOhm @ 69A, 10V 11mOhm @ 40A, 10V 7.4mOhm @ 66A, 10V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
FET Feature - - - -
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kapasite Antre (Ciss) (Max) @ Vds 4540 pF @ 25 V 5050 pF @ 25 V 2650 pF @ 25 V 6130 pF @ 25 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V
Drenaj Sous Voltage (Vdss) 100 V 55 V 55 V 75 V
Vgs (th) (Max) @ Id 2V @ 2mA 2V @ 180µA 2V @ 93µA 4V @ 250µA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 250W (Tc) 250W (Tc) 158W (Tc) 300W (Tc)
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Vgs (Max) ±20V ±20V ±20V ±20V
Seri SIPMOS® OptiMOS™ OptiMOS™ OptiMOS™
Kouran - Kontini Drain (Id) @ 25 ° C 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)

SPP80N10L fich PDF

Download SPP80N10L PDF fich ak dokiman Infineon Technologies pou SPP80N10L - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN obsolescence/ eol
Multiple Devices 22/Feb/2008.pdf
Fich
SPI,SPP80N10L.pdf

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SPP80N10L Image

SPP80N10L

Infineon Technologies
32D-SPP80N10L

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