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Kay Pwodwi yo Diskresyon semiconductor pwodwi Transistors - FETs, MOSFETs - Single~~DMG8880LSS-13~~

Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

~~Favori~~

EKSPRIME OPSYON

Metòd Peman

DMG8880LSS-13 - Diodes Incorporated

Name: Diodes Incorporated DMG8880LSS-13
Brand: Diodes Incorporated
SKU: DMG8880LSS-13
Availability: InStock
Rating: 5 (5 reviews)

Manifakti Nimewo Pati: DMG8880LSS-13

Manifakti: Diodes Incorporated

Allelco Nimewo Pati: 32D-DMG8880LSS-13

ECAD modèl

Pati Deskripsyon: MOSFET N-CH 30V 11.6A 8SOP

Pake: 8-SOIC (0.154", 3.90mm Width)

Done fèy: DMG8880LSS.pdf

RoHs Status

~~Konpare~~

Sètifikasyon nou an

Nan stok: 4330

EKSPRIME OPSYON

Metòd Peman

Sètifikasyon nou an

Espesifikasyon

Espesifikasyon DMG8880LSS-13 Tech
Diodes Incorporated - DMG8880LSS-13 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Diodes Incorporated - DMG8880LSS-13

Pwodwi atribi	Valè atribi
Manifakti	Diodes Incorporated
Vgs (th) (Max) @ Id	2V @ 250µA
Vgs (Max)	±20V
Teknoloji	MOSFET (Metal Oxide)
Founisè Aparèy pake	8-SO
Seri	-
Rds Sou (Max) @ Id, Vgs	10mOhm @ 11.6A, 10V
Dissipasyon pouvwa (Max)	1.43W (Ta)
Pake / Ka	8-SOIC (0.154", 3.90mm Width)
Pakèt	Tape & Reel (TR)

Pwodwi atribi	Valè atribi
Operating Tanperati	-55°C ~ 150°C (TJ)
Mounting Kalite	Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds	1289 pF @ 15 V
Pòtay Charge (Qg) (Max) @ Vgs	27.6 nC @ 10 V
Fèt tip	N-Channel
FET Feature	-
Kondwi Voltage (Max Rds sou, Min Rds sou)	4.5V, 10V
Drenaj Sous Voltage (Vdss)	30 V
Kouran - Kontini Drain (Id) @ 25 ° C	11.6A (Ta)
Nimewo pwodwi baz	DMG8880

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI	DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL)	1 (Unlimited)
Rive nan estati	REACH Unaffected
ECCN	EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Diodes Incorporated DMG8880LSS-13.

Pwodwi atribi
Nimewo Pati	DMG8880LSS-13	DMG8880LK3-13	DMG7430LFG-7	DMG7702SFG-13
Manifakti	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Kondwi Voltage (Max Rds sou, Min Rds sou)	4.5V, 10V	4.5V, 10V	4.5V, 10V	4.5V, 10V
Dissipasyon pouvwa (Max)	1.43W (Ta)	1.68W (Ta)	900mW (Ta)	890mW (Ta)
Vgs (Max)	±20V	±20V	±20V	±20V
Drenaj Sous Voltage (Vdss)	30 V	30 V	30 V	30 V
Fèt tip	N-Channel	N-Channel	N-Channel	N-Channel
Kapasite Antre (Ciss) (Max) @ Vds	1289 pF @ 15 V	1289 pF @ 15 V	1281 pF @ 15 V	4310 pF @ 15 V
Operating Tanperati	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Teknoloji	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id	2V @ 250µA	2.3V @ 250µA	2.5V @ 250µA	2.5V @ 250µA
Seri	-	-	-	-
Nimewo pwodwi baz	DMG8880	DMG8880	DMG7430	DMG7702
Mounting Kalite	Surface Mount	Surface Mount	Surface Mount	Surface Mount
FET Feature	-	-	-	Schottky Diode (Body)
Pakèt	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Kouran - Kontini Drain (Id) @ 25 ° C	11.6A (Ta)	11A (Ta)	10.5A (Ta)	12A (Ta)
Pake / Ka	8-SOIC (0.154", 3.90mm Width)	TO-252-3, DPak (2 Leads + Tab), SC-63	8-PowerVDFN	8-PowerVDFN
Rds Sou (Max) @ Id, Vgs	10mOhm @ 11.6A, 10V	7.5mOhm @ 11.6A, 10V	11mOhm @ 20A, 10V	10mOhm @ 13.5A, 10V
Founisè Aparèy pake	8-SO	TO-252, (D-Pak)	PowerDI3333-8	PowerDI3333-8
Pòtay Charge (Qg) (Max) @ Vgs	27.6 nC @ 10 V	27.6 nC @ 10 V	26.7 nC @ 10 V	14.7 nC @ 10 V

DMG8880LSS-13 fich PDF

Download DMG8880LSS-13 PDF fich ak dokiman Diodes Incorporated pou DMG8880LSS-13 - Diodes Incorporated.

Enfòmasyon sou anviwònman an: Diodes Environmental Compliance Cert.pdf
PCN Lòt: Multiple Device Changes 29/Apr/2013.pdf
PCN konsepsyon/spesifikasyon: Bond Wire 11/Nov/2011.pdf
PCN obsolescence/ eol: Select Discrete Devices 20/Feb/2014.pdf
Asanble PCN/orijin: Mult Dev Wafer Fab Add 8/Aug/2012.pdf
Fich: DMG8880LSS.pdf

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DMG8880LSS-13

Diodes Incorporated
32D-DMG8880LSS-13

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