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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayDMN2012UCA6-7
Diodes Incorporated
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

DMN2012UCA6-7 - Diodes Incorporated

Manifakti Nimewo Pati
DMN2012UCA6-7
Manifakti
Diodes Incorporated
Allelco Nimewo Pati
32D-DMN2012UCA6-7
ECAD modèl
Pati Deskripsyon
MOSFET BVDSS: 8V-24V X3-DSN2718-
Deskripsyon detaye
Pake
6-SMD, No Lead
Done fèy
DMN2012UCA6.pdf
RoHs Status
Nan stok: 64400

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon DMN2012UCA6-7 Tech
Diodes Incorporated - DMN2012UCA6-7 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Diodes Incorporated - DMN2012UCA6-7

Pwodwi atribi Valè atribi  
Manifakti Diodes Incorporated  
Vgs (th) (Max) @ Id 1.3V @ 1mA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake X3-DSN2718-6  
Seri -  
Rds Sou (Max) @ Id, Vgs 9mOhm @ 5A, 4.5V  
Pouvwa - Max 820mW  
Pake / Ka 6-SMD, No Lead  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2417pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 26nC @ 4V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 24V  
Kouran - Kontini Drain (Id) @ 25 ° C 13A (Ta)  
Konfigirasyon 2 N-Channel (Dual) Common Drain  
Nimewo pwodwi baz DMN2012  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Diodes Incorporated DMN2012UCA6-7.

Pwodwi atribi DMN2012UCA6-7 DMN2016LFG-7 DMN2008LFU-7 DMN2011UFX-7
Nimewo Pati DMN2012UCA6-7 DMN2016LFG-7 DMN2008LFU-7 DMN2011UFX-7
Manifakti Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Seri - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 13A (Ta) 5.2A 14.5A 12.2A (Ta)
Founisè Aparèy pake X3-DSN2718-6 U-DFN3030-8 U-DFN2030-6 (Type B) V-DFN2050-4
Drenaj Sous Voltage (Vdss) 24V 20V 20V 20V
Rds Sou (Max) @ Id, Vgs 9mOhm @ 5A, 4.5V 18mOhm @ 6A, 4.5V 5.4mOhm @ 5.5A, 4.5V 9.5mOhm @ 10A, 4.5V
FET Feature - Logic Level Gate - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 26nC @ 4V 16nC @ 4.5V 42.3nC @ 10V 56nC @ 10V
Nimewo pwodwi baz DMN2012 DMN2016 DMN2008 DMN2011
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pouvwa - Max 820mW 770mW 1W 2.1W
Vgs (th) (Max) @ Id 1.3V @ 1mA 1.1V @ 250µA 1.5V @ 250A 1V @ 250µA
Kapasite Antre (Ciss) (Max) @ Vds 2417pF @ 10V 1472pF @ 10V 1418pF @ 10V 2248pF @ 10V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Konfigirasyon 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain
Pake / Ka 6-SMD, No Lead 8-PowerUDFN 6-UFDFN Exposed Pad 4-VFDFN Exposed Pad

DMN2012UCA6-7 fich PDF

Download DMN2012UCA6-7 PDF fich ak dokiman Diodes Incorporated pou DMN2012UCA6-7 - Diodes Incorporated.

Enfòmasyon sou anviwònman an
Diodes Environmental Compliance Cert.pdf
Fich
DMN2012UCA6.pdf

Shipment

Tan livrezon

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Diodes Incorporated

DMN2012UCA6-7

Diodes Incorporated
32D-DMN2012UCA6-7

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