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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleDMN2075U-7
DMN2075U-7 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

DMN2075U-7 - Diodes Incorporated

Manifakti Nimewo Pati
DMN2075U-7
Manifakti
Diodes Incorporated
Allelco Nimewo Pati
32D-DMN2075U-7
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 4.2A SOT23-3
Deskripsyon detaye
Pake
TO-236-3, SC-59, SOT-23-3
Done fèy
DMN2075U.pdf
RoHs Status
Nan stok: 525600

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon DMN2075U-7 Tech
Diodes Incorporated - DMN2075U-7 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Diodes Incorporated - DMN2075U-7

Pwodwi atribi Valè atribi  
Manifakti Diodes Incorporated  
Vgs (th) (Max) @ Id 1V @ 250µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SOT-23-3  
Seri -  
Rds Sou (Max) @ Id, Vgs 38mOhm @ 3.6A, 4.5V  
Dissipasyon pouvwa (Max) 800mW (Ta)  
Pake / Ka TO-236-3, SC-59, SOT-23-3  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 594.3 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 7 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.2A (Ta)  
Nimewo pwodwi baz DMN2075  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Diodes Incorporated DMN2075U-7.

Pwodwi atribi DMN2075U-7 DMN2065UWQ-7 DMN2104L-7 DMN2065UW-7
Nimewo Pati DMN2075U-7 DMN2065UWQ-7 DMN2104L-7 DMN2065UW-7
Manifakti Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Pake / Ka TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Drenaj Sous Voltage (Vdss) 20 V 20 V 20 V 20 V
Kouran - Kontini Drain (Id) @ 25 ° C 4.2A (Ta) 3.1A (Ta) 4.3A (Ta) 2.8A (Ta)
Seri - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pòtay Charge (Qg) (Max) @ Vgs 7 nC @ 4.5 V 5.4 nC @ 4.5 V - 5.4 nC @ 4.5 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature - - - -
Vgs (Max) ±8V ±12V ±12V ±12V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Founisè Aparèy pake SOT-23-3 SOT-323 SOT-23-3 SOT-323
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kapasite Antre (Ciss) (Max) @ Vds 594.3 pF @ 10 V 400 pF @ 10 V 325 pF @ 10 V 400 pF @ 10 V
Rds Sou (Max) @ Id, Vgs 38mOhm @ 3.6A, 4.5V 56mOhm @ 2A, 4.5V 53mOhm @ 4.2A, 4.5V 56mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1.4V @ 250µA 1V @ 250µA
Dissipasyon pouvwa (Max) 800mW (Ta) 700mW (Ta) 1.4W (Ta) 430mW (Ta)
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 1.5V, 4.5V 2.5V, 4.5V 1.5V, 4.5V
Nimewo pwodwi baz DMN2075 DMN2065 DMN2104 DMN2065

DMN2075U-7 fich PDF

Download DMN2075U-7 PDF fich ak dokiman Diodes Incorporated pou DMN2075U-7 - Diodes Incorporated.

Enfòmasyon sou anviwònman an
Diodes Environmental Compliance Cert.pdf
PCN Lòt
Multiple Device Changes 29/Apr/2013.pdf
PCN konsepsyon/spesifikasyon
Bond Wire 11/Nov/2011.pdf
PCN obsolescence/ eol
Mult Devices EOL 05/Feb/2019.pdf Mult Dev Reinstate 5/Feb/2019.pdf
Asanble PCN/orijin
Assembly REV 07/Sep/2021.pdf
Fich
DMN2075U.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
DMN2075U-7 Image

DMN2075U-7

Diodes Incorporated
32D-DMN2075U-7

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