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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleDMS3016SSSA-13
Diodes Incorporated
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

DMS3016SSSA-13 - Diodes Incorporated

Manifakti Nimewo Pati
DMS3016SSSA-13
Manifakti
Diodes Incorporated
Allelco Nimewo Pati
32D-DMS3016SSSA-13
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 9.8A 8SO
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
DMS3016SSSA.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 4040

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon DMS3016SSSA-13 Tech
Diodes Incorporated - DMS3016SSSA-13 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Diodes Incorporated - DMS3016SSSA-13

Pwodwi atribi Valè atribi  
Manifakti Diodes Incorporated  
Vgs (th) (Max) @ Id 2.3V @ 250µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri -  
Rds Sou (Max) @ Id, Vgs 13mOhm @ 9.8A, 10V  
Dissipasyon pouvwa (Max) 1.54W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1849 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 43 nC @ 10 V  
Fèt tip N-Channel  
FET Feature Schottky Diode (Body)  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 9.8A (Ta)  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Diodes Incorporated DMS3016SSSA-13.

Pwodwi atribi DMS3016SSSA-13 DMS3016SSS-13 DMS3016SFG-7 DMS3014SSS-13
Nimewo Pati DMS3016SSSA-13 DMS3016SSS-13 DMS3016SFG-7 DMS3014SSS-13
Manifakti Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Vgs (Max) ±12V ±12V ±12V ±12V
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Founisè Aparèy pake 8-SO 8-SO PowerDI3333-8 8-SO
Fèt tip N-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 1.54W (Ta) 1.54W (Ta) 980mW (Ta) 1.55W (Ta)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Seri - - - -
Rds Sou (Max) @ Id, Vgs 13mOhm @ 9.8A, 10V 13mOhm @ 9.8A, 10V 13mOhm @ 11.2A, 10V 13mOhm @ 10.4A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 1849 pF @ 15 V 1849 pF @ 15 V 1886 pF @ 15 V 2296 pF @ 15 V
Kouran - Kontini Drain (Id) @ 25 ° C 9.8A (Ta) 9.8A (Ta) 7A (Ta) 10.4A (Ta)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (th) (Max) @ Id 2.3V @ 250µA 2.3V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-PowerVDFN 8-SOIC (0.154", 3.90mm Width)
Pòtay Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 43 nC @ 10 V 44.6 nC @ 10 V 45.7 nC @ 10 V
FET Feature Schottky Diode (Body) Schottky Diode (Body) Schottky Diode (Body) Schottky Diode (Body)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)

DMS3016SSSA-13 fich PDF

Download DMS3016SSSA-13 PDF fich ak dokiman Diodes Incorporated pou DMS3016SSSA-13 - Diodes Incorporated.

Enfòmasyon sou anviwònman an
Diodes Environmental Compliance Cert.pdf
PCN Lòt
Multiple Device Changes 29/Apr/2013.pdf
PCN obsolescence/ eol
Mult Devices EOL 05/Feb/2019.pdf
Fich
DMS3016SSSA.pdf

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Sètifikasyon & Manm

Wè plis
Diodes Incorporated

DMS3016SSSA-13

Diodes Incorporated
32D-DMS3016SSSA-13

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